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机译:低反应温度下GaSb纳米线的自催化生长
Chemistry Department and Center for Nanointegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, Universitaetsstr. 5-7, D-45117 Essen, Germany;
Chemistry Department and Center for Nanointegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, Universitaetsstr. 5-7, D-45117 Essen, Germany;
Chemistry Department and Center for Nanointegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, Universitaetsstr. 5-7, D-45117 Essen, Germany;
Chemistry Department, University of Bonn, Roemerstr. 164, D-53117 Bonn, Germany;
A1. Nanostructures; A3. Metalorganic chemical vapor deposition; B1. Antimonides; B2. Semiconducting gallium compounds;
机译:金属有机化学气相沉积在InAs茎上自催化生长垂直GaSb纳米线
机译:黑硅上的III–V纳米线和自催化矩形InAs NW的低温生长
机译:黑硅上的III–V纳米线和自催化矩形InAs NW的低温生长
机译:在自催化生长期间形成垂直纳米线和GaAs结晶簇的条件
机译:催化剂介导的III-V族纳米线的生长和光学性质:金催化砷化镓和自催化磷化铟
机译:金属有机化学气相沉积法在InAs茎上自催化生长垂直GaSb纳米线
机译:III-V纳米线对黑色硅和自催化矩形INAS NWS的低温生长