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首页> 外文期刊>Journal of Crystal Growth >About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock
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About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock

机译：关于由污染的原料进行的多晶硅定向凝固过程中C和N相关沉淀的形成和避免

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摘要

Multi-crystalline silicon ingots with a diameter of 6 cm and a height of 4-5 cm were directionally solidified in a laboratory scale crystal growth facility within a Si_3N_4-coated fused silica crucible with a growth rate of 1 cm/h for two different conditions of convective transport in the melt. The feedstock quality was varied from "pure" (electronic grade) to highly carbon-contaminated and highly nitrogen-contaminated. It will be demonstrated that under certain convective process conditions even for a highly contaminated feedstock (C and N) a mc silicon ingot can be grown which has an axially and radially homogenous carbon and nitrogen concentration in the range 3-4 × 10~(17) C-atoms/cm~3 and 2-4 × 10~(15) N-atoms/cm~3, respectively, and is free of SiC- and Si_3N_4-precipitates in the bulk.
机译：在实验室规模的晶体生长设备中，在涂覆有Si_3N_4的熔融石英坩埚中，以1 cm / h的生长速率在两种不同条件下，将直径6 cm，高度4-5 cm的多晶硅锭定向凝固。熔体中的对流传输。原料的质量从“纯”（电子级）到高度碳污染和高度氮污染不等。将证明在某些对流过程条件下，即使对于高度污染的原料（C和N），也可以生长mc硅锭，其轴向和径向的碳和氮浓度在3-4×10〜（17 ）分别为C原子/ cm〜3和2-4×10〜（15）N原子/ cm〜3，并且本体中不含SiC-和Si_3N_4-沉淀。

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  • 来源
    《Journal of Crystal Growth》 |2010年第9期|p.1510-1516|共7页
  • 作者

    C. Reimann; M. Trempa; J. Friedrich; G. Mueller;

  • 作者单位

    Department of Crystal Growth, Fraunhofer Institute IISB, Schottkystr. 10, 91058 Erlangen, Germany Fraunhofer THM, Am St.-Niclas-Schacht 13, 09599 Freiberg, Germany;

    Department of Crystal Growth, Fraunhofer Institute IISB, Schottkystr. 10, 91058 Erlangen, Germany;

    Department of Crystal Growth, Fraunhofer Institute IISB, Schottkystr. 10, 91058 Erlangen, Germany Fraunhofer THM, Am St.-Niclas-Schacht 13, 09599 Freiberg, Germany;

    Department of Crystal Growth, Fraunhofer Institute IISB, Schottkystr. 10, 91058 Erlangen, Germany Crystal Consulting, Birkenstrasse 17, 91094 Langensendelbach, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Directional solidification; A1. Impurities; A1. Mass transfer; A2. Vertical gradient freeze; B2. Multi-crystalline silicon; B3. Solar cells;

    机译：A1。定向凝固;A1。杂质;A1。传质;A2。垂直梯度冻结;B2。多晶硅B3。太阳能电池;

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