Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第19期|p.2705-2709|共5页
• 作者

  D. Wang; rnS.P. Svensson; rnL. Shterengas; rnG. Belenky;

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• 作者单位

  Department of Electrical and Computer Engineering, SUNY at Stony Brook, NY 11794, USA;

  rnArmy Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA;

  rnDepartment of Electrical and Computer Engineering, SUNY at Stony Brook, NY 11794, USA;

  rnDepartment of Electrical and Computer Engineering, SUNY at Stony Brook, NY 11794, USA;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Ultra fast; A1. Carrier lifetime; A1. Absorption; A1. Photoluminescence; B1. InAsN; B1. Dilute-nitride;

  机译：A1。超快A1。载具寿命A1。吸收A1。光致发光;B1。 InAsN;B1。稀氮化物;