In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第19期|p.2677-2682|共6页
• 作者

  G. Rajesh; rnM. Arivanandhan; rnH. Morii; rnT. Aoki; rnT. Koyama; rnY. Momose; rnA. Tanaka; rnT. Ozawa; rnY. Inatomi; rnY. Hayakawa;

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• 作者单位

  Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;

  rnResearch Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;

  rnResearch Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;

  rnResearch Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;

  rnResearch Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;

  rnResearch Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;

  rnResearch Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;

  rnDepartment of Electrical Engineering, Shizuoka Institute of Science and Technology, Fukuroi, Shizuoka 437-8555, Japan;

  rnInstitute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan;

  rnResearch Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Mass transfer; A2. Growth from solutions; B1. Gallium compounds; B2. Semiconducting III-V materials;

  机译：A1。传质;A2。解决方案的增长;B1。镓化合物;B2。半导体III-V材料;