AlN bulk single crystal growth on 6H-SiC substrates by sublimation method

Ichiro Nagai; rnTomohisa Kato; rnTomonori Miura; rnHiroyuki Kamata; rnKunihiro Naoe; rnKazuo Sanada; rnHajime Okumura

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AlN bulk single crystal growth on 6H-SiC substrates by sublimation method

机译：升华法在6H-SiC衬底上生长AlN块状单晶

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Large and thick A1N bulk single crystals up to 43 mm in diameter and 10 mm in thickness have been successfully grown on 6H-SiC (0 0 01) substrates by the sublimation method using a TaC crucible. Raman spectrum indicates that the polytype of the grown A1N single crystals is a Wurtzite-2H type structure, and the crystals do not include any impurity phases. The quality at the top of the crystal improves as crystal thickness increases along the <0 0 0 1 > direction during growth: a low etch pit density (7×10~4cm~(-2)) and a small full width at half maximum for a 0002 X-ray rocking curve (58 arcsec) have been achieved at a thickness of ～8mm. The possible mechanism behind the improvement in the A1N crystal quality is also discussed.

机译：通过使用TaC坩埚的升华方法，已经成功地在6H-SiC（0 0 01）衬底上生长了直径最大为43 mm，厚度为10 mm的大而厚的AlN块状单晶。拉曼光谱表明，生长的AlN单晶的多型是Wurtzite-2H型结构，并且该晶体不包含任何杂质相。在生长过程中，随着<0 0 0 1>方向晶体厚度的增加，晶体顶部的质量提高：蚀刻坑密度低（7×10〜4cm〜（-2）），半峰宽小对于0002 X射线摇摆曲线（58 arcsec），已达到约8mm的厚度。还讨论了改善AlN晶体质量的可能机理。

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来源
《Journal of Crystal Growth》 |2010年第19期|p.2699-2704|共6页
作者
Ichiro Nagai; rnTomohisa Kato; rnTomonori Miura; rnHiroyuki Kamata; rnKunihiro Naoe; rnKazuo Sanada; rnHajime Okumura;
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作者单位

National Institute of Advanced Industrial Science and Technology, Advanced Power Electronics Research Center, Japan;

rnNational Institute of Advanced Industrial Science and Technology, Advanced Power Electronics Research Center, Japan;

rnNational Institute of Advanced Industrial Science and Technology, Advanced Power Electronics Research Center, Japan;

rnFujikura Ltd, Japan;

rnFujikura Ltd, Japan;

rnFujikura Ltd, Japan;

rnNational Institute of Advanced Industrial Science and Technology, Advanced Power Electronics Research Center, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A2. Growth from vapor; A2. Single crystal growth; B1. Nitrides;

机译：A2。蒸气生长;A2。单晶生长;B1。氮化物;

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专利

1. Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (1120) 6H-SiC Substrates [J] . Taro NISHIGUCHI, Yasuichi MASUDA, Satoru OHSHIMA, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第4APt1期

机译：通过升华晶棒生长技术在（1120）6H-SiC衬底上生长的6H-SiC单晶中的空心缺陷的减少
2. Single-crystal Growth Of Aluminum Nitride On 6h-sic Substrates By An Open-system Sublimation Method [J] . Hiroyuki Kamata, Kunihiro Naoe, Kazuo Sanada, Journal of Crystal Growth . 2009,第5期

机译：开放系统升华法在6h-sic衬底上单晶生长氮化铝
3. Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer [J] . Sibin Zuo, Jun Wang, Xiaolong Chen, Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2012,第2期

机译：AlN MOCVD缓冲层在6H-SiC（0001）衬底上生长AlN单晶
4. AlN bulk single crystal growth on SiC and AlN substrates by sublimation method [C] . Nagai Ichiro, Kato Tomohisa, Miura Tomonori, 2010 International Conference on Indium Phosphide and Related Materials . 2010

机译：升华法在SiC和AlN衬底上生长AlN块状单晶
5. Al-rich AlGaN and AlN Growth on Bulk AlN Single Crystal Substrates [D] . Bryan, Isaac S. 2015

机译：块状AlN单晶衬底上的富铝AlGaN和AlN生长
6. Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal [O] . Yue Yu, Botao Liu, Xia Tang, 2020

机译：钨罐升温升温升华生长升高的均质化45毫米ALN单晶
7. Single-crystal growth of aluminum nitride on 6H-SiC substrates by an open-system sublimation method [O] . Hiroyuki Kamata, Kunihiro Naoe, Kazuo Sanada, 2009

机译：开放式系统升华法在6H-SiC基材上的氮化铝的单晶生长
8. Sublimation Growth of AlN Single Crystal on AlN Coated SiC Substrate. Phase 1 [R] . Khan, M. A. 1995

机译：alN涂层siC衬底上alN单晶的升华生长。阶段1

AlN bulk single crystal growth on 6H-SiC substrates by sublimation method

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