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Impurity segregation in directional solidified multi-crystalline silicon

机译：定向凝固多晶硅中的杂质偏析

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摘要

In this paper numerical results on the impurity segregation in directional solidified multi-crystalline silicon are presented and compared with experimental results. A solute transport model has been established to predict the final segregation pattern of impurities in the ingot. The segregation is analyzed experimentally on the basis of Fourier transform infrared (FTIR) spectroscopy and glow-discharge mass spectrometry (GDMS). Precipitates were located by IR-transmission microscopy (IRM). Qualitative agreement between simulation and experiment is found. It is demonstrated how the flow pattern can influence the final solute distribution. The simulation also shows that the solubility limit of carbon and nitrogen is reached locally in the ingot and SiC and Si_3N_4 precipitates are likely to form.
机译：本文给出了定向凝固多晶硅中杂质偏析的数值结果，并与实验结果进行了比较。已经建立了溶质传输模型来预测铸锭中杂质的最终偏析模式。在傅立叶变换红外光谱（FTIR）和辉光放电质谱（GDMS）的基础上，对偏析进行了实验分析。通过红外透射显微镜（IRM）对沉淀物进行定位。发现仿真与实验之间的定性一致。证明了流动模式如何影响最终的溶质分布。模拟还表明，碳和氮的溶解度极限在铸锭中局部达到，并且可能形成SiC和Si_3N_4沉淀。

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  • 来源
    《Journal of Crystal Growth》 |2010年第21期|p.3091-3095|共5页
  • 作者

    M.P. Bellmann; E.A. Meese; L. Arnberg;

  • 作者单位

    Department of Materials Science and Engineering, NTNU, Alfred Getz vei 2, 7491 Trondheim, Norway,SINTEF Materials and Chemistry, Alfred Getz vei 2, 7465 Trondheim, Norway;

    SINTEF Materials and Chemistry, Alfred Getz vei 2, 7465 Trondheim, Norway;

    Department of Materials Science and Engineering, NTNU, Alfred Getz vei 2, 7491 Trondheim, Norway;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Segregation; A1. Convection; A1. Numerical simulation; A1. Impurities; A2. Growth from melt; B3. Solar cell;

    机译：A1。隔离;A1。对流;A1。数值模拟A1。杂质;A2。从熔体中生长;B3。太阳能电池;

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