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首页> 外文期刊>Journal of Crystal Growth >A novel method for gas flow and impurity control in directional solidification of multi-crystalline silicon
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A novel method for gas flow and impurity control in directional solidification of multi-crystalline silicon

机译：多晶硅定向凝固中气体流动和杂质控制的新方法

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摘要

In this paper the potential of a specially designed argon gas injector for controlling the gas flow and transport of impurities in directional solidification of multi-crystalline silicon is evaluated. The gas injector which consists of a valve allows one to control the flow direction independently in the vertical and horizontal directions. Based on a gas flow model derived from a semi-industrial crystallization furnace the impact of different gas injection combinations on the gas flow pattern and impurity transport is studied. Special focus is given to the SiO evacuation from the melt-free surface, the CO formation at graphite surfaces and the CO evacuation from the furnace interior. It is found that for gas flow pattern formed through horizontal rather than vertical gas injection, SiO and CO are evacuated most effectively from the furnace interior and the formation of CO is inhibited. Such a type of gas injector presents a versatile tool for controlling the flow and impurity transport in the gas phase and possibly improving the material properties of crystalline silicon.
机译：在本文中，评估了一种特殊设计的氩气喷射器的潜力，该喷射器可用于控制气体的流动和杂质在多晶硅的定向凝固中的传输。由阀组成的气体喷射器允许一个人在垂直和水平方向上独立地控制流动方向。基于半工业结晶炉的气体流动模型，研究了不同气体注入组合对气体流动模式和杂质传输的影响。特别关注的是从无熔体表面排放SiO，从石墨表面排放一氧化碳以及从炉膛内部排放一氧化碳。已经发现，对于通过水平而不是垂直的气体注入形成的气流模式，SiO和CO最有效地从炉内部抽出，并且抑制了CO的形成。这种类型的气体注射器提供了用于控制气相中的流动和杂质传输并可能改善晶体硅的材料特性的通用工具。

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