Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第21期|p.3131-3135|共5页
• 作者

  Daisuke Iida; KentaTamura; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki;

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• 作者单位

  Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

  Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1 Crystal structure; A1 Doping; B1 Nitrides; B2 Semiconducting gallium compounds;

  机译：A1晶体结构;A1掺杂;B1氮化物;B2半导体镓化合物;