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首页> 外文期刊>Journal of Crystal Growth >Differences in nucleation and properties of InN islands formed using two different deposition procedures
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Differences in nucleation and properties of InN islands formed using two different deposition procedures

机译：使用两种不同沉积程序形成的InN岛形核和性质的差异

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The initial stages of metalorganic chemical vapor deposition of InN have been investigated using two different growth procedures: growth of InN over a GaN buffer layer in one continuous run and growth of InN on a pre-deposited GaN template. While the growth conditions and material quality of the GaN underlying layers are nominally the same, characterization by AFM, X-ray diffraction and PL spectroscopy reveals significantly different material properties of InN islands formed using the two procedures and suggests a different path of evolution during the initial stages of growth. In particular, InN islands grown on a pre-deposited GaN template seem to nucleate directly on the GaN template and are 5 times larger in volume and 2 times lower in surface density as compared with InN growth in one continuous run with the GaN underlying layer. Our studies suggest that the Ga incorporation into the InN during the growth on a GaN buffer layer in one continuous run plays a significant role in altering InN growth mechanisms and material properties.
机译：已经使用两种不同的生长程序研究了InN的金属有机化学气相沉积的初始阶段：一次连续运行在GaN缓冲层上进行InN的生长，以及在预沉积的GaN模板上进行InN的生长。尽管GaN底层的生长条件和材料质量在名义上是相同的，但通过AFM，X射线衍射和PL光谱进行的表征揭示了使用这两种方法形成的InN岛的材料特性显着不同，并暗示了在氮化镓工艺过程中的不同演化路径。成长的初始阶段。特别是，与在GaN基础层上连续进行的InN生长相比，在预沉积的GaN模板上生长的InN岛似乎直接在GaN模板上成核，并且体积比InN生长大5倍，表面密度低2倍。我们的研究表明，在连续运行的GaN缓冲层上生长期间，Ga掺入InN中对改变InN的生长机理和材料性能起着重要作用。

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