Optimizing dopant activation in Si:P double 5-layers

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第21期|p.3247-3250|共4页
• 作者

  Sarah R. McKibbin; Warrick R. Clarke; Andreas Fuhrer; Michelle Y. Simmons;

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• 作者单位

  School of Physics, University of New South Wales, Sydney 2052, Australia;

  School of Physics, University of New South Wales, Sydney 2052, Australia;

  School of Physics, University of New South Wales, Sydney 2052, Australia;

  School of Physics, University of New South Wales, Sydney 2052, Australia,Australian Research Council Centre of Excellence for Quantum Computer Technology, Sydney 2052, Australia;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. 5-doping; A1. Surface structure; A3. Molecular beam epitaxy; B2. Semiconducting silicon;

  机译：A1。 5掺杂;A1。表面结构;A3。分子束外延;B2。半导体硅;