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首页> 外文期刊>Journal of Crystal Growth >Well width study of InGaN multiple quantum wells for blue-green emitter
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Well width study of InGaN multiple quantum wells for blue-green emitter

机译：用于蓝绿色发射极的InGaN多量子阱的阱宽研究

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摘要

InGaN/GaN multiple quantum well structures emitting in the blue/green wavelength region were grown by metal organic vapor phase epitaxy. By reducing the quantum well growth time the influence of the quantum well thicknesses between 3.8 and 1.1 nm on the indium incorporation and the distribution of indium in the quantum wells in growth direction were investigated. X-ray diffraction measurements show that the average indium mole fraction in the quantum wells decreases with reducing quantum well width due to a delay in the indium incorporation at the barrier/well interface. Quantitative analysis reveals a segregation length of about 2 nm as a measure of the graded region in growth direction. Cathodoluminescence imaging reveals that the spatial variation of the wavelength is reduced with decreasing quantum well thickness down to 1.7 nm. Reducing the width of the quantum well further results in an increase of the spatial wavelength variation.
机译：通过金属有机气相外延生长在蓝/绿波长区域发射的InGaN / GaN多量子阱结构。通过减少量子阱的生长时间，研究了在3.8 nm和1.1 nm之间的量子阱厚度对铟掺入和铟在量子阱中沿生长方向的分布的影响。 X射线衍射测量表明，由于势垒/阱界面处铟掺入的延迟，量子阱中的平均铟摩尔分数随着量子阱宽度的减小而减小。定量分析显示，分离长度约为2 nm，作为生长方向上渐变区域的度量。阴极发光成像显示，随着量子阱厚度减小至1.7 nm，波长的空间变化得以减小。减小量子阱的宽度进一步导致空间波长变化的增加。

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  • 来源
    《Journal of Crystal Growth》 |2010年第23期|p.3428-3433|共6页
  • 作者

    V.Hoffmann; C.Netzel; U.Zeimer; A.Knauer; S.Einfeldt; F.Bertram; J.Christen; M.Weyers; G.Traenkle; M.Kneissl;

  • 作者单位

    Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany;

    rnFerdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany;

    rnFerdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany;

    rnFerdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany;

    rnFerdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany;

    rnInstitut fuer Experimentalphysik, Otto-von-Guericke-Universitaet Magdeburg, 39106 Magdeburg, Germany;

    rnInstitut fuer Experimentalphysik, Otto-von-Guericke-Universitaet Magdeburg, 39106 Magdeburg, Germany;

    rnFerdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany;

    rnFerdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany;

    rnFerdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany Institut fuer Festkorperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Segregation; A1. High resolution X-ray diffraction; A3. Low press; A3. Metal organic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds;

    机译：A1。隔离;A1。高分辨率X射线衍射;A3。低压力A3。金属有机气相外延;B1。氮化物;B2。半导体铟化合物;

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