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Synthesis and optical properties of purified translucent, orthorhombic boron nitride films

机译：纯化的半透明斜方氮化硼薄膜的合成及光学性质

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摘要

Large-area (> 1 cm~2) freestanding translucent orthorhombic boron nitride (oBN) films have been synthesized by magnetron sputtering at a low radio-frequency power of 120 W. The structural characterizations were performed by means of X-ray diffraction, Fourier transform infrared spectro-scopy, and X-ray photoelectron spectroscopy. It is demonstrated that oBN is a direct band gap semiconductor (E_g～3.43 eV). Excited by ultraviolet laser (wavelength at 325 nm), the oBN films emit strong white light, which can be seen by the naked eyes in the dark. In the photoluminescence spectrum, besides the ultraviolet near-band-edge radiative recombination emission, there are three visible emission bands (centered at 400, 538, and 700 nm) arising from the defect-related deep-level centers of oBN, which are mixed to form the white light emission. The hardness and elastic modulus of oBN films are 11.5 and 94 GPa, respectively, examined by nanoindentation measurements.
机译：通过磁控溅射在120 W的低射频功率下合成了大面积（> 1 cm〜2）的独立的半透明斜方氮化硼（oBN）薄膜。通过X射线衍射，傅立叶技术进行了结构表征变换红外光谱和X射线光电子能谱。证明了oBN是直接带隙半导体（E_g〜3.43 eV）。 oBN薄膜在紫外激光（波长为325 nm）的激发下发出强烈的白光，在黑暗中用肉眼可以看到。在光致发光光谱中，除了紫外近带边缘的辐射复合发射外，oBN的与缺陷相关的深能级中心还产生了三个可见发射带（以400、538和700 nm为中心），它们混合在一起形成白光发射。通过纳米压痕测量，oBN薄膜的硬度和弹性模量分别为11.5和94 GPa。

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  • 来源
    《Journal of Crystal Growth》 |2010年第23期|p.3434-3437|共4页
  • 作者

    Xuxin Yang; Hongdong Li; Yingai Li; Xianyi Lv; Guangtian Zou;

  • 作者单位

    State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China College of Science, Hangzhou Normal University, Hangzhou 310036, China;

    rnState Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;

    rnState Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;

    rnState Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;

    rnState Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Crystal structure; A3. Physical vapor deposition processes; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials;

    机译：A1。晶体结构A3。物理气相沉积过程;B1。氮化物;B2。半导体Ⅲ-Ⅴ材料;

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