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首页> 外文期刊>Journal of Crystal Growth >Effects Of Ceo_2 Buffer Layer Thickness On The Orientation And Dielectric Properties Of Ba(zr_(0.20)ti_(0.80))o_3 Thin Films
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Effects Of Ceo_2 Buffer Layer Thickness On The Orientation And Dielectric Properties Of Ba(zr_(0.20)ti_(0.80))o_3 Thin Films

机译：Ceo_2缓冲层厚度对Ba（zr_（0.20）ti_（0.80））o_3薄膜取向和介电性能的影响

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摘要

Ba(Zr_(0.20)Ti_(0.80))O_3 (BZT) thin films are deposited on Pt(111)/Ti/SiO_2/Si(100) substrates by the sol-gel technique. The thickness of the CeO_2, serving as a buffer layer, is varied from 0 to 20 nm, to study the dependence of the orientation and dielectric properties of the BZT thin films on the buffer layer thickness. The influence of buffer layer thickness on the microstructure of the thin films is also examined. Dielectric properties of the thin films are investigated as a function of temperature and direct current electric field. The results show that the CeO_2 buffer layer strongly influences the orientation, microstructure and the dielectric properties of the films. The BZT thin films with 5 nm thickness CeO_2 buffer layer have the least loss, smallest leakage current and largest figure of merit (FOM).
机译：通过溶胶-凝胶技术将Ba（Zr_（0.20）Ti_（0.80））O_3（BZT）薄膜沉积在Pt（111）/ Ti / SiO_2 / Si（100）衬底上。用作缓冲层的CeO_2的厚度在0到20 nm之间变化，以研究BZT薄膜的取向和介电性能对缓冲层厚度的依赖性。还检查了缓冲层厚度对薄膜的微观结构的影响。研究了薄膜的介电性能与温度和直流电场的关系。结果表明，CeO_2缓冲层强烈影响薄膜的取向，微观结构和介电性能。具有5 nm厚度的CeO_2缓冲层的BZT薄膜具有最小的损耗，最小的漏电流和最大的品质因数（FOM）。

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