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首页> 外文期刊>Journal of Crystal Growth >Effects of buffer layers on the orientation and dielectric properties of Ba(Zr_(0.20)Ti_(0.80))O_3 thin films prepared by sol-gel method
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Effects of buffer layers on the orientation and dielectric properties of Ba(Zr_(0.20)Ti_(0.80))O_3 thin films prepared by sol-gel method

机译:缓冲层对溶胶-凝胶法制备Ba(Zr_(0.20)Ti_(0.80))O_3薄膜取向和介电性能的影响

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摘要

Ba(Zr_(0.20)Ti_(0.80))O_3 (BZT) thin films were deposited on Pt(111)/Ti/SiO_2/Si(100), LaNiO_3 (LNO) and CeO_2-buffered Pt(111)/Ti/SiO_2/ Si(1 00) substrates by sol-gel process. The BZT thin films directly grown on Pt(111)/Ti/SiO_2/Si(l 00) substrates exh
机译:将Ba(Zr_(0.20)Ti_(0.80))O_3(BZT)薄膜沉积在Pt(111)/ Ti / SiO_2 / Si(100),LaNiO_3(LNO)和CeO_2缓冲的Pt(111)/ Ti / SiO_2上通过溶胶-凝胶法制备Si(1 00)衬底。直接在Pt(111)/ Ti / SiO_2 / Si(l 00)衬底上生长的BZT薄膜

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