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机译:SiO_2溅射和快速热退火在InP基量子点中的蓝移发射
Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
nanostructures; molecular beam epitaxy; InGaAlAs;
机译:通过快速热退火对具有GaAs / AlGaAs超晶格的自组装InGaAs / GaAs量子点的发射波长进行微调
机译:快速热退火对高度均匀自组装InAs / GaAs量子点发射1.3μm发射特性的影响
机译:毫秒级快速热退火使用热等离子射流在浮栅存储器上诱导在SiO_2上形成高密度Pt纳米点
机译:由SiO
机译:基于INP的核心/壳量子点的合成,稳定性和动态表面化学
机译:通过快速热退火改善1.3μmInAs / GaAs量子点激光器中的基态调制特性
机译:通过反应磁控溅射沉积和快速热退火制备的富含含硅氧化硅膜的电子发射性能