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首页> 外文期刊>Journal of Crystal Growth >Blue-shift emission in InP-based quantum dots by SiO_2 sputtering and rapid thermal annealing
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Blue-shift emission in InP-based quantum dots by SiO_2 sputtering and rapid thermal annealing

机译:SiO_2溅射和快速热退火在InP基量子点中的蓝移发射

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摘要

We have investigated the atomic-intermixing effect in In(Ga, Al)As/InP quantum dots (QDs) by tuning the group III compositions. The QDs including InAs, In_(0.95)Al_(0.05)As, and In_(0.95)Ga_(0.05)As were embedded in In_(0.52)Al_(0.48)As matrix. The intermixing process includes the deposition of a sputtered SiO_2 layer on the sample surface and a subsequent rapid thermal annealing (RTA) at temperature between 700 and 800℃. From the room-temperature photoluminescence data, InAs and In_(0.95)Al_(0.05)As QDs show similar wavelength tuning behavior against the RTA temperature. In_(0.95)Ga_(0.05)As QDs exhibit an extra amount of wavelength blue-shift, and have a maximum blue-shift of ,281 nm at a RTA temperature of 800℃ The results suggest an enhanced atomic-intermixing effect by the presence of Ga atoms.
机译:我们已经通过调整III族组成来研究了In(Ga,Al)As / InP量子点(QDs)中的原子混合效应。将包括InAs,In_(0.95)Al_(0.05)As和In_(0.95)Ga_(0.05)As的量子点嵌入In_(0.52)Al_(0.48)As矩阵中。混合过程包括在样品表面沉积溅射的SiO_2层,然后在700至800℃之间进行快速热退火(RTA)。从室温光致发光数据来看,InAs和In_(0.95)Al_(0.05)As QD对RTA温度显示出相似的波长调谐行为。 In_(0.95)Ga_(0.05)As QDs在800℃的RTA温度下表现出额外的波长蓝移,并且最大蓝移为281 nm。结果表明,存在的QD增强了原子混合作用Ga原子。

著录项

  • 来源
    《Journal of Crystal Growth》 |2009年第7期|1787-1790|共4页
  • 作者单位

    Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    nanostructures; molecular beam epitaxy; InGaAlAs;

    机译:纳米结构分子束外延铟镓铝;

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