The Kondo effect observed up to T_K～80 K in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

K. Shibata; K. Hirakawa

首页> 外文期刊>Journal of Crystal Growth >The Kondo effect observed up to T_K～80 K in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

【24h】

The Kondo effect observed up to T_K～80 K in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

机译：在与纳米隙电极横向耦合的自组装InAs量子点中，近藤效应观察到高达T_K〜80 K

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, Kondo effect was observed when strong coupling between the electrodes and the QD was realized using a large QD with a diameter of ~100nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperature T_K was determined to be ~81 K. This is the highest T_K ever reported for artificial quantum nanostructures. The observed very high TK is due to strong QD-electrode coupling and large charging/orbital-quantization energies in the present self-assembled InAs QD structures.

机译：我们通过直接在单个自组装InAs量子点（QD）上形成纳米间隙金属电极来制造单电子隧道结构。制成的样品表现出明显的库仑阻断作用。此外，当使用直径约为100nm的大QD实现电极与QD之间的强耦合时，会观察到近藤效应。根据近藤谷处线性电导的温度依赖性，近藤温度T_K被确定为〜81K。这是有史以来人工量子纳米结构报道的最高T_K。在目前的自组装InAs QD结构中，观察到的非常高的TK是由于强QD电极耦合和大的充电/轨道量子化能量所致。

著录项

来源
《Journal of Crystal Growth》 |2009年第7期|1795-1798|共4页
作者
K. Shibata; K. Hirakawa;
展开▼
作者单位

Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;

Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan INQIE, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan CREST-JST, 4-1-8 Honcho, Kawaguchi. Saitama 332-0012, Japan;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
nanostructures; quantum dot; semiconducting indium arsenide; single electron transistors;

机译：纳米结构量子点半导体砷化铟;单电子晶体管;

相似文献

外文文献
中文文献
专利

1. High Kondo temperature (T_K～80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes [J] . K. Shibata, K. Hirakawa Applied Physicsletters . 2008,第6期

机译：横向组装到纳米间隙电极上的自组装InAs量子点的近藤温度较高（T_K〜80 K）
2. Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes [J] . Kenji Shibata, Christo Buizert, Akira Oiwa, Applied Physics Letters . 2007,第11期

机译：通过单个自组装InAs量子点的横向电子隧穿，该量子点与超导纳米间隙电极耦合
3. Electron tunneling through single self-assembled InAs quantum dots coupled to nanogap electrodes [J] . K. Shibata, M. Jung, C. Buizert, Physica status solidi . 2008,第9期

机译：通过与纳米隙电极耦合的单个自组装InAs量子点的电子隧穿
4. Shell Structures in Self-Assembled InAs Quantum Dots Observed by Lateral Single Electron Tunneling Structures [C] . M. Jung, K. Hirakawa, S. Ishida, International Conference on the Physics of Semiconductors . 2005

机译：通过横向单电子隧道结构观察自组装INAS量子点的壳结构
5. Self-assembled quantum dots: A theoretical study of the exciton in single and vertically coupled type-II quantum dots. [D] . Janssens, Karen. 2003

机译：自组装量子点：对单个和垂直耦合的II型量子点中激子的理论研究。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. High Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes [O] . Shibata, K., Hirakawa, K. 2008

机译：自组装Inas量子点中的高Kondo温度（TK~80 K）横向耦合到纳米间隙电极

The Kondo effect observed up to T_K～80 K in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

摘要

著录项

相似文献

相关主题

期刊订阅