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首页> 外文期刊>Journal of Crystal Growth >Carbon doping of non-polar cubic GaN by CBr_4
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Carbon doping of non-polar cubic GaN by CBr_4

机译：CBr_4对非极性立方GaN的碳掺杂

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摘要

Non-polar carbon-doped cubic GaN (c-GaN:C) films were grown by the plasma-assisted molecular beam epitaxy (MBE) using carbon tetra-bromide (CBr_4) as a carbon source. The growth was in-situ monitored by the reflection high-energy electron diffraction (RHEED) and for the atomic carbon detection quadrupole mass spectrometry (QMS) was applied. Time-of-flight secondary ion mass spectroscopy (ToF-SIMS) was used to quantify the carbon incorporation behavior. The structural, morphological and optical properties of the epilayers were studied by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements at room temperature and at 4K. The electrical properties of c-GaN:C samples were determined by measuring the current-voltage (I-V) characteristics at room temperature.
机译：使用四溴化碳（CBr_4）作为碳源，通过等离子体辅助分子束外延（MBE）生长非极性碳掺杂立方GaN（c-GaN：C）薄膜。通过反射高能电子衍射（RHEED）原位监测生长，并应用原子碳检测四极杆质谱（QMS）。飞行时间二次离子质谱（ToF-SIMS）用于量化碳结合行为。通过高分辨率X射线衍射（HRXRD），原子力显微镜（AFM）和光致发光（PL）在室温和4K下的测量研究了外延层的结构，形态和光学性质。通过在室温下测量电流-电压（I-V）特性来确定c-GaN：C样品的电性能。

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  • 来源
    《Journal of Crystal Growth》 |2009年第7期|2039-2041|共3页
  • 作者

    D.J. As; E. Tschumak; H. Poettgen; O. Kasdorf; J.W. Gerlach; H. Karl; K. Lischka;

  • 作者单位

    Department of Physics, University of Paderborn, Warburger Strasse 100, 33098 Paderbom, Germany;

    Department of Physics, University of Paderborn, Warburger Strasse 100, 33098 Paderbom, Germany;

    Department of Physics, University of Paderborn, Warburger Strasse 100, 33098 Paderbom, Germany;

    Department of Physics, University of Paderborn, Warburger Strasse 100, 33098 Paderbom, Germany;

    Leibniz-lnstitut fuer Oberflaechenmodiflzierung e.V., Permoserstrasse 15, 04318 Leipzig, Germany;

    University of Augsburg, Experimentalphysik IV, Universitatsstrasse 1 Nord, 86135 Augsburg, Germany;

    Department of Physics, University of Paderborn, Warburger Strasse 100, 33098 Paderbom, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    A1. Doping; A1. High-resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds;

    机译：A1。掺杂A1。高分辨率X射线衍射;A3。分子束外延;B1。氮化物;B2。半导体镓化合物;

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