Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy

著录项

• 来源
  《Journal of Crystal Growth》 |2009年第7期|2176-2178|共3页
• 作者

  K. Ohtani; M. Belmoubarik; H. Ohno;

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• 作者单位

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A3. Molecular Beam Epitaxy; A3. Quantum well; B1. Oxides; B2. Semiconducting II-VI materials; B3. Heterojunction semiconductor devices;

  机译：A3。分子束外延;A3。量子阱;B1。氧化物;B2。 II-VI半导体材料;B3。异质结半导体器件;