Influence of arsenic flux on the annealing properties of GalnNAs quantum wells for long wavelength laser applications around 1.6 μm

Dirk Bisping; Damian Pucicki; Marc Fischer; Sven Hoefling; Alfred Forchel

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Influence of arsenic flux on the annealing properties of GalnNAs quantum wells for long wavelength laser applications around 1.6 μm

机译：砷通量对1.6μm左右长波长激光应用中GalnNAs量子阱退火性能的影响

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The influence of the arsenic flux during molecular beam epitaxy growth of 1.5-1.6-μm-emitting GalnNAs quantum wells on the annealing properties is studied. Reducing the arsenic flux results in an increase of the time needed for optimum annealing and offers an easy possibility for tailoring the annealing behavior of GalnNAs layers. Investigation of the annealing behavior of complete laser structures shows that over-annealing can already occur after the growth of complete laser structures due to the high substrate temperature during growth of cladding layers. Applying these observations to the growth of laser structures results in laser diodes covering the wavelength range from 1460 to 1610 nm with threshold current densities in the range 1.3-3.3 kA/cm~2.

机译：研究了发射1.5-1.6μm的GalnNAs量子阱分子束外延生长过程中砷通量对退火性能的影响。减少砷通量会导致最佳退火所需的时间增加，并为调整GalnNAs层的退火行为提供了简便的可能性。对完整激光器结构的退火行为的研究表明，由于在熔覆层生长过程中衬底温度较高，因此在完整激光器结构生长之后就已经可能发生过度退火。将这些观察结果应用于激光结构的生长会导致激光二极管覆盖1460至1610 nm的波长范围，阈值电流密度在1.3-3.3 kA / cm〜2的范围内。

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来源
《Journal of Crystal Growth》 |2009年第7期|1715-1718|共4页
作者
Dirk Bisping; Damian Pucicki; Marc Fischer; Sven Hoefling; Alfred Forchel;
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作者单位

Universitaet Wuerzburg, Technische Physik, Am Hubland, D-97074 Wuerzburg, Germany;

Universitaet Wuerzburg, Technische Physik, Am Hubland, D-97074 Wuerzburg, Germany;

Nanoplus Nanosystems & Technologies GmbH, Oberer Kirschberg 4, D-97218 Gerbrunn, Germany;

Universitaet Wuerzburg, Technische Physik, Am Hubland, D-97074 Wuerzburg, Germany;

Universitaet Wuerzburg, Technische Physik, Am Hubland, D-97074 Wuerzburg, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
defects; molecular beam epitaxy; dilute nitrides; semiconducting Ⅲ-V materials; laser diodes;

机译：缺陷分子束外延稀氮化物半导体Ⅲ-Ⅴ材料;激光二极管;

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1. Low-threshold GalnNAs single-quantum- well lasers with emission wavelength over 1.3μm [J] . K. Adachi, K. Nakahara, J. Kasai, Electronics Letters . 2006,第23期

机译：发射波长超过1.3μm的低阈值GalnNAs单量子阱激光器
2. Influence of annealing temperature on structural, morphological and optical properties of CTAB assisted cadmium sulphide (CdS) quantum dots: promising candidate for quantum dot sensitized solar cell (QDSSC) applications [J] . Muniyappan Srinivasan, Solaiyammal T., Keerthana B. Gomathi Thanga, Journal of materials science . 2017,第15期

机译：退火温度对CTAB辅助硫化镉（CdS）量子点的结构，形态和光学性质的影响：量子点敏化太阳能电池（QDSSC）应用的有希望的候选者
3. Influence of annealing temperature of Si(100):(Er,O) diodes on room-temperature electroluminescence at wavelengths of 1.0-1.6μm [J] . A. M. Emelianov, Yu. A. Nikolaev, N. A. Sobolev, Bulletin of the Russian Academy of Sciences. Physics . 2003,第2期

机译：Si（100）:( Er，O）二极管的退火温度对波长为1.0-1.6μm的室温电致发光的影响
4. Influence of pulsed laser annealing on the properties of Ge quantum dots in Si matrix [C] . E.I. Gatskevich, G.D. Ivlev, V.A. Volodin, Conference on High-Power Laser Ablation . 2008

机译：脉冲激光退火对Si基体中Ge量子点性能的影响
5. 1.5--1.6μm Wavelength GaInAsP/InP Injection Lasers [D] . 荒井滋久. 1982

机译：1.5--1.6μm波长GaInAsP / InP注入激光器
6. A Compact Mid-Infrared Spectroscopy System for Healthcare Applications Based on a Wavelength-Swept Pulsed Quantum Cascade Laser [O] . Takuya Koyama, Naoto Shibata, Saiko Kino, 2020

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7. 1.3mm single-mode extended cavity GalnNAs/GaAs lasers produced using a sputtered SiO₂ quantum well intermixing technique [O] . Harris John Lee 2005

机译：使用溅射siO 2量子阱混合技术生产的1.3 m m单模扩展腔GalnNas / Gaas激光器

Influence of arsenic flux on the annealing properties of GalnNAs quantum wells for long wavelength laser applications around 1.6 μm

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