Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth

著录项

• 来源
  《Journal of Crystal Growth》 |2009年第7期|1803-1806|共4页
• 作者

  S. Haffouz; S. Raymond; Z.G. Lu; P.J. Barrios; D. Roy-Guay; X. Wu; J.R. Liu; D. Poitras; Z.R. Wasilewski;

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• 作者单位

  Institute for Microstructuml Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, ON, Canada K1A 0A6;

  Institute for Microstructuml Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, ON, Canada K1A 0A6;

  Institute for Microstructuml Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, ON, Canada K1A 0A6;

  Institute for Microstructuml Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, ON, Canada K1A 0A6;

  Institute for Microstructuml Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, ON, Canada K1A 0A6;

  Institute for Microstructuml Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, ON, Canada K1A 0A6;

  Institute for Microstructuml Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, ON, Canada K1A 0A6;

  Institute for Microstructuml Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, ON, Canada K1A 0A6;

  Institute for Microstructuml Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, ON, Canada K1A 0A6;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  low-dimensional structures; nanomaterials; molecular beam epitaxy; semiconducting gallium arsenide;

  机译：低维结构;纳米材料分子束外延半导体砷化镓;