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首页> 外文期刊>Journal of Crystal Growth >The growth of high electron mobility InAsSb for application to high electron-mobility transistors

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The growth of high electron mobility InAsSb for application to high electron-mobility transistors

机译：高电子迁移率InAsSb的生长，用于高电子迁移率晶体管

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摘要

High electron mobility and low defect density InAsSb lattice matched to AlSb has been successfully grown on InP substrates by the gas-source molecular beam epitaxy using an AlAsSb/AlSb composite buffer layer structure. The common antimony anion of AlAsSb, AlSb, and InAsSb is believed to effectively improve the film quality of InAsSb and AlSb by providing a surfactant effect. With this composite buffer layer structure, the room temperature electron mobility of InAsSb (lattice matched to A1Sb) can reach as high as 18,000 cm~2/Vs. A high electron-mobility transistor based on this heterostructure shows a high gm of 350mS/mm (gate length=6 μm) indicating the potential for high-speed applications.

机译：通过使用AlAsSb / AlSb复合缓冲层结构的气源分子束外延技术，成功地在InP衬底上生长了与AlSb匹配的高电子迁移率和低缺陷密度InAsSb晶格。据信，AlAsSb，AlSb和InAsSb的常见锑阴离子可通过提供表面活性剂作用来有效改善InAsSb和AlSb的膜质量。利用这种复合缓冲层结构，InAsSb（晶格与AlSb匹配）的室温电子迁移率可高达18,000 cm〜2 / Vs。基于该异质结构的高电子迁移率晶体管显示出350mS / mm的高gm（栅极长度= 6μm），表明了高速应用的潜力。

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来源
《Journal of Crystal Growth》 |2009年第7期|1976-1978|共3页
作者
Chichih Liao; K.Y. Cheng;
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作者单位

Electrical and Computer Engineering Department, University of Illinois, 208 N. Wright Street, Urbana, IL 61801, USA;

Electrical and Computer Engineering Department, University of Illinois, 208 N. Wright Street, Urbana, IL 61801, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
molecular beam epitaxy; antimonides; semiconducting ternary compounds; high electron mobility transistors;

机译：分子束外延锑化物半导体三元化合物;高电子迁移率晶体管;

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机译：6.2用于高速和低功耗的Inassb高电子迁移率晶体管

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