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首页> 外文期刊>Journal of Crystal Growth >The synthesis of Sn-doped ZnO nanowires on ITO substrate and their optical properties
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The synthesis of Sn-doped ZnO nanowires on ITO substrate and their optical properties

机译：ITO衬底上掺Sn的ZnO纳米线的合成及其光学性质

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摘要

Single crystalline Sn-doped ZnO nanowires were successfully synthesized on indium tin oxide (ITO)-coated glass substrate by simple thermal evaporation approach without introducing any catalysts. The morphology and microstructure were determined by field emission scanning electron microscopy (FE-SEM), X-ray diffraction, high-resolution transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence (PL) spectroscopy. The investigation confirmed that the products were of the wurtzite structure of ZnO. These doped nanowires have diameters in the range 30-50 nm and lengths of several tens of micrometers with growth direction along the c-axis of the crystal plane. Photoluminescence of these doped nanowires exhibits a weak ultraviolet (UV) emission peak at around 400 nm and the strong green emission peak at around 495 nm at room temperature, which may be induced by the Sn-doping. The growth mechanism of the doped nanowires was also discussed.
机译：通过简单的热蒸发方法在不引入任何催化剂的情况下，成功地在涂有氧化铟锡（ITO）的玻璃基板上成功合成了单晶Sn掺杂的ZnO纳米线。通过场发射扫描电子显微镜（FE-SEM），X射线衍射，高分辨率透射电子显微镜（TEM），能量色散X射线光谱法（EDS）和光致发光（PL）光谱来确定形态和微观结构。研究证实，产物具有ZnO的纤锌矿结构。这些掺杂的纳米线的直径在30-50 nm范围内，长度为几十微米，其生长方向沿晶面的c轴。这些掺杂的纳米线的光致发光在室温下在约400nm处表现出弱的紫外线（UV）发射峰并且在约495nm处表现出强的绿色发射峰，这可能是由Sn掺杂引起的。还讨论了掺杂纳米线的生长机理。

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  • 来源
    《Journal of Crystal Growth》 |2009年第8期|2466-2469|共4页
  • 作者

    Yong Su; Ling Li; Yiqing Chen; Qingtao Zhou; Mi Gao; Qiong Chen; Yi Feng;

  • 作者单位

    School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

    School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Doping; A1. Nanostructures; A3.Chemical vapor deposition processes; Bl.Nanomaterials; B3. Semiconducting materials;

    机译：A1。掺杂A1。纳米结构;A3。化学气相沉积工艺;Bl。纳米材料;B3。半导体材料;

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