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首页> 外文期刊>Journal of Crystal Growth >On favorable thermal fields for detached Bridgman growth
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On favorable thermal fields for detached Bridgman growth

机译：关于有利于布里奇曼独立增长的热场

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The thermal fields of two Bridgman-like configurations, representative of real systems used in prior experiments for the detached growth of CdTe and Ge crystals, are studied. These detailed heat transfer computations are performed using the CrysMAS code and expand upon our previous analysis [C. Stelian, A. Yeckel, J.J. Derby, Influence of thermal phenomena on crystal reattachment during the dewetted Bridgman growth, J. Cryst. Growth, in press] that posited a new mechanism involving the thermal field and meniscus position to explain stable conditions for dewetted Bridgman growth. Computational results indicate that heat transfer conditions that led to successful detached growth in both of these systems are in accordance with our prior assertion, namely that the prevention of crystal reattachment to the crucible wall requires the avoidance of any undercooling of the melt meniscus during the growth run. Significantly, relatively simple process modifications that promote favorable thermal conditions for detached growth may overcome detrimental factors associated with meniscus shape and crucible wetting. Thus, these ideas may be important to advance the practice of detached growth for many materials.
机译：研究了两种类似Bridgman构型的热场，它们代表了先前实验中用于CdTe和Ge晶体脱离生长的实际系统。这些详细的传热计算是使用CrysMAS代码执行的，并且在我们之前的分析基础上进行了扩展[C. Stelian，A.Yeckel，J.J。德比（Derby），热现象对布里奇曼（Bridgman）晶体生长过程中晶体重新附着的影响，J。Cryst。增长]，提出了涉及热场和弯月面位置的新机制，以解释布里奇曼生长的稳定条件。计算结果表明，导致这两个系统成功脱离生长的传热条件与我们先前的主张一致，即，防止晶体重新附着在坩埚壁上需要避免在生长过程中熔融弯液面过冷跑。值得注意的是，相对简单的工艺改进可为分离生长提供有利的热条件，可以克服与弯液面形状和坩埚润湿相关的有害因素。因此，这些思想对于推进许多材料的独立生长实践可能很重要。

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