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Vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying axial magnetic field

机译:能够施加轴向磁场的垂直梯度冻结和垂直布里奇曼化合物半导体晶体生长装置

摘要

An improved vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying an axial magnetic field of about 1600G in the crystal growth axis direction using an electrical resistance type electromagnet which has a simple structure and can be installed easily, which includes a high temperature electric furnace arranged at an upper portion of the apparatus, a crystal growth reaction tube disposed within a low temperature electric furnace arranged below the high temperature electric furnace and having a reaction container disposed therein, and an electromagnet surrounding the intermediate portion of the high temperature electric furnace.
机译:改进的垂直梯度冻结和垂直布里奇曼化合物半导体晶体生长装置,能够使用结构简单且易于安装的电阻型电磁铁在晶体生长轴方向施加大约1600G的轴向磁场,该装置包括高温电炉布置在设备的上部,晶体生长反应管布置在低温电炉内,该低温电炉布置在高温电炉下方并在其中布置有反应容器,电磁铁围绕高温的中间部分电炉。

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