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首页> 外文期刊>Journal of Crystal Growth >Structural and optical properties of single-crystal ZnMgO thin films grown on sapphire and ZnO substrates by RF magnetron sputtering
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Structural and optical properties of single-crystal ZnMgO thin films grown on sapphire and ZnO substrates by RF magnetron sputtering

机译：射频磁控溅射在蓝宝石和ZnO衬底上生长的单晶ZnMgO薄膜的结构和光学性质

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摘要

High-quality ZnMgO films were grown by the radio frequency (RF) magnetron sputtering technique in pure oxygen ambient. Single-crystal films were obtained, when the Mg concentration was Zn_(0.87)Mg_(0.13)O or lower in the case of ZnMgO/Al_2O_3 and when it was Zno.65Mgo.35O or lower in the case of ZnMgO/ZnO. Polycrystalline films were obtained when the growth temperature was lower than 500 ℃, regardless of the Mg concentration. Position of the photoluminescence (PL) ultraviolet (UV) peak of the ZnMgO film shifted with the addition of Mg, from 3.33eV (ZnO) to 3.51 eV (Zn_(0.87)Mg_(0.13)O) and 3.70eV (Zn_(0.65)Mg_(0.35)O). It was also observed that growth of the ZnMgO films at higher temperature resulted in higher band-gap energy. It was proposed that this phenomenon is because concentration of the substitutional Mg atoms occupying Zn site is increased as the growth temperature increases.
机译：通过射频（RF）磁控溅射技术在纯氧环境中生长高质量的ZnMgO膜。当ZnMgO / Al_2O_3的Mg浓度为Zn_（0.87）Mg_（0.13）O或更低，而当ZnMgO / ZnO的Mg浓度为Zno.65Mgo.35O或更低时，获得单晶膜。当生长温度低于500℃时，无论Mg浓度如何，均会获得多晶膜。 ZnMgO薄膜的光致发光（PL）紫外（UV）峰位置随着添加Mg而发生变化，从3.33eV（ZnO）移至3.51 eV（Zn_（0.87）Mg_（0.13）O）和3.70eV（Zn_（0.65 Mg_（0.35）O）。还观察到在较高温度下ZnMgO膜的生长导致较高的带隙能量。提出该现象是因为随着生长温度的升高，占据Zn位点的取代Mg原子的浓度增加。

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  • 来源
    《Journal of Crystal Growth》 |2009年第14期|3618-3621|共4页
  • 作者

    Il-Soo Kim; Byung-Teak Lee;

  • 作者单位

    Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300 Yong-bong dong, Gwangju 500-757, Republic of Korea;

    Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300 Yong-bong dong, Gwangju 500-757, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Band-gap engineering; A3. Sputter deposition; B1. ZnMgO; B1. ZnO;

    机译：A1。带隙工程;A3。溅射沉积;B1。氧化锌镁;B1。氧化锌;

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