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Epitaxial NiO (100) and NiO (111) films grown by atomic layer deposition

机译:通过原子层沉积生长的外延NiO(100)和NiO(111)膜

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摘要

Epitaxial NiO (111) and NiO (100) films have been grown by atomic layer deposition on both MgO (100) and α-Al_2O_3 (001) substrates at temperatures as low as 200℃ by using bis(2,2,6,6-tetramethyl-3,5-heptanedionato)Ni(II) and water as precursors. The films grown on the MgO (100) substrate show the expected cube on cube growth while the NiO (111) films grow with a twin rotated 180° on the α-Al_2O_3 (001) substrate surface. The films had columnar microstructures on both substrate types. The single grains were running throughout the whole film thickness and were significantly smaller in the direction parallel to the surface. Thin NiO (111) films can be grown with high crystal quality with a FWHM of 0.02-0.05° in the rocking curve measurements.
机译:通过使用bis(2,2,6,6)在低至200℃的温度下通过原子层沉积在MgO(100)和α-Al_2O_3(001)衬底上生长了外延NiO(111)和NiO(100)膜-四甲基-3,5-庚二酮基)Ni(II)和水作为前体。在MgO(100)衬底上生长的薄膜显示出立方晶生长的预期立方体,而NiO(111)薄膜在α-Al_2O_3(001)衬底表面上旋转180°孪晶生长。所述膜在两种基底类型上均具有柱状微结构。单个晶粒贯穿整个膜厚度,并且在平行于表面的方向上明显较小。 NiO(111)薄膜可以在摇摆曲线测量中以0.02-0.05°的FWHM高质量生长。

著录项

  • 来源
    《Journal of Crystal Growth》 |2009年第16期|4082-4088|共7页
  • 作者单位

    Department of Materials Chemistry, The Angstroem Laboratory, Uppsala University, Box 538, SE-751 21 Uppsala, Sweden;

    Angstroem Microstructure Laboratory, The Angstroem Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala, Sweden;

    Department of Materials Chemistry, The Angstroem Laboratory, Uppsala University, Box 538, SE-751 21 Uppsala, Sweden;

    Department of Materials Chemistry, The Angstroem Laboratory, Uppsala University, Box 538, SE-751 21 Uppsala, Sweden;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Atomic layer deposition; A2. X-ray diffraction; A3. Transmission electron microscopy; A4. NiO (100); A5. NiO (111); A6. Crystallite size;

    机译:A1。原子层沉积;A2。 X射线衍射;A3。透射电子显微镜;A4。氧化镍(100);A5。 NiO(111);A6。微晶尺寸;

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