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机译:ZnO均质缓冲层上原位和异位ZnO纳米棒的生长
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;
Department of Physics and Institute of Fusion Science, Chonbuk National University, jeonju 561-756, Republic of Korea;
New Materials and Components Research Center, Research Institute of Industrial Science and Technology, Pohang 790-600, Republic of Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;
Department of Physics and Institute of Fusion Science, Chonbuk National University, jeonju 561-756, Republic of Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;
Division of Science Education, Institute of Fusion Science and Institute of Science Education, Chonbuk National University, Jeonju 561-756, Republic of Korea;
A1. ZnO; A1. Structure; A1. Buffer layer; A3. MOCVD; A3. Film; B1. Nanorod;
机译:ZnO纳米棒和ZnO均质缓冲层界面的微观结构性能
机译:利用MOCVD法分析ZnO纳米棒生长ZnO均质缓冲层的结构
机译:溶胶-凝胶制备的ZnO种子层上ZnO纳米棒的低温水热生长:最佳生长条件
机译:ZnO和Zn种子层的可行性,通过SONochemical方法进行垂直对准和高质量ZnO纳米棒的生长
机译:二维电子气(2DEG)生长的Zn-极性BeMgZnO / ZnO异质结构和BeMgZnO / ZnO异质结构上银肖特基二极管的制备
机译:增长条件对超声波喷雾热解沉积ZnO种子层生长的CBD合成ZnO纳米棒性能的影响
机译:增长条件对超声波喷雾热解沉积ZnO种子层生长的CBD合成ZnO纳米棒性能的影响