...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(111)B surface reconstructions in selective-area metal organic vapour-phase epitaxy
【24h】

Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(111)B surface reconstructions in selective-area metal organic vapour-phase epitaxy

机译：选择性区域金属有机蒸气相外延中GaAs纳米线和四面体双缺陷的分析及其与GaAs（111）B表面重建的关系

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We analyzed twin defects in GaAs nanowires as thin as 100-400 nm and tetrahedral structures as small as 1.0 μm, which were selectively grown by metal organic vapour-phase epitaxy (MOVPE) within a SiO_2 mask window fabricated on GaAs(111)B substrates. In particular, we focused on the correlation between the twins and GaAs(111)B surface reconstructions. We confirmed that the shape of GaAs crystals selectively grown on GaAs(111)B substrates changed from hexagonal nanowires to truncated tetrahedra when the size of the mask opening was increased from 100 to 1000 nm under the same growth conditions. The shape also changed from tetrahedral to hexagonal with decreasing growth temperature (T_g: 600-800℃) and with increasing arsine (AsH_3) partial pressure (1.0 × 10~(-4) to 5.0 × 10~(-4) atm). Rotational twins around the <111> axis were found in the tetrahedra by transmission electron microscopy (TEM) and scanning electron microscopy observations. In addition, the probability of twins developing in the tetrahedra increased with decreasing mask opening size, with decreasing T_g, and with increasing AsH_3 partial pressure. The TEM study also revealed the existence of a high density of rotational twins in the nanowires, and their density increased with decreasing nanowire diameter, suggesting a correlation between the twins and the shape/size of GaAs crystals. These findings were semi-quantitatively compared with a reported phase diagram for GaAs(111)B surface reconstruction. By analyzing the relationship between twin development and MOVPE conditions, we found that the shape change of GaAs crystals on GaAs(111)B and the formation of twins coincided well with the transition of GaAs surface reconstruction between the (2 × 2) and (√19 × √19) structures.
机译：我们分析了厚度为100-400 nm的GaAs纳米线和厚度为1.0μm的四面体结构中的双缺陷，这些缺陷是通过在GaAs（111）B衬底上制造的SiO_2掩模窗口内的金属有机气相外延（MOVPE）选择性生长的。特别是，我们专注于孪晶与GaAs（111）B表面重建之间的相关性。我们确认，当在相同的生长条件下将掩膜开口的尺寸从100 nm增加到1000 nm时，选择性生长在GaAs（111）B衬底上的GaAs晶体的形状从六角形纳米线变为截短的四面体。随着生长温度（T_g：600-800℃）的降低和砷化氢（AsH_3）的分压（1.0×10〜（-4）到5.0×10〜（-4）atm）的增加，形状也从四面体变为六边形。通过透射电子显微镜（TEM）和扫描电子显微镜观察，在四面体中发现了围绕<111>轴的旋转孪晶。此外，随着面罩开口尺寸的减小，T_g的减小以及AsH_3的分压的增大，四面体中孪晶发展的可能性也随之增加。 TEM研究还表明，纳米线中存在高密度的旋转孪晶，并且随着纳米线直径的减小，旋转孪晶的密度增加，这表明孪晶与GaAs晶体的形状/尺寸之间存在相关性。将这些发现与GaAs（111）B表面重建的已报告相图进行了半定量比较。通过分析孪晶发展与MOVPE条件之间的关系，我们发现GaAs（111）B上GaAs晶体的形状变化和孪晶的形成与（2×2）和（√ 19×√19）结构。

著录项

  • 来源
    《Journal of Crystal Growth》 |2009年第1期|52-57|共6页
  • 作者

    Hiroatsu Yoshida; Keitaro Ikejiri; Takuya Sato; Shinjiroh Hara; Kenji Hiruma; Junichi Motohisa; Takashi Fukui;

  • 作者单位

    Research Center for Integrated Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan;

    Research Center for Integrated Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan;

    Research Center for Integrated Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan;

    Research Center for Integrated Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan;

    Research Center for Integrated Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan;

    Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan;

    Research Center for Integrated Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Nanowire; A1. Surface reconstruction; A1. Twin defect; A3. Metalorganic vapor phase epitaxy; B2. Gallium arsenide;

    机译：A1。纳米线;A1。表面重建;A1。双胞胎缺陷A3。金属有机气相外延;B2。砷化镓;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号