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首页> 外文期刊>Journal of Crystal Growth >Structural investigation of growth and dissolution of In_xGa_(1-x)N nano-islands grown by molecular beam epitaxy
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Structural investigation of growth and dissolution of In_xGa_(1-x)N nano-islands grown by molecular beam epitaxy

机译：分子束外延生长In_xGa_（1-x）N纳米岛的生长和溶解的结构研究

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摘要

Free-standing nanometre sized In_xGa_(1-x)N islands and islands capped with thin GaN layers were grown by molecular beam epitaxy (MBE) and characterised by high resolution transmission electron microscopy (HRTEM). By adjusting the growth temperature of the In_xGa_(1-x)N islands, deposition of the wurtzite modification was realised. The obtained free-standing islands are plastically relaxed by approximately equidistant misfit dislocations. For capped samples, the GaN cap layer thickness was varied between nominal thicknesses of 2 nm and 8 nm. Already for a 2 nm thick cap layer, strong dissolution of the islands occurred. In case of the 8 nm thick GaN cap layer, all former islands are dissolved, and an InGaN layer of approximately homogeneous indium concentration is observed.
机译：通过分子束外延（MBE）生长独立的纳米尺寸In_xGa_（1-x）N岛和覆盖有GaN薄层的岛，并通过高分辨率透射电子显微镜（HRTEM）对其进行表征。通过调节In_xGa_（1-x）N岛的生长温度，实现了纤锌矿变质的沉积。通过近似等距的错位错位使获得的独立式孤岛塑性松弛。对于加盖的样品，GaN盖层的厚度在2 nm和8 nm的标称厚度之间变化。对于2 nm厚的盖层，已经发生了岛的强烈溶解。在使用8 nm厚的GaN盖层的情况下，所有以前的岛都被溶解了，并且观察到铟浓度大致均匀的InGaN层。

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