Epitaxial growth of CdSe_xTe_(1-x) thin films on Si(100) by molecular beam epitaxy using lattice mismatch graded structures

F.Z. Amir; K. Clark; E. Maldonado; W.P. Kirk; J.C. Jiang; J.W. Ager III; K.M. Yu; W. Walukiewicz

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Epitaxial growth of CdSe_xTe_(1-x) thin films on Si(100) by molecular beam epitaxy using lattice mismatch graded structures

机译：CdSe_xTe_（1-x）薄膜在Si（100）上通过分子束外延使用晶格失配梯度结构外延生长

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CdSeTe epilayers were grown by molecular beam epitaxy on (100)-oriented vicinal silicon wafers. By controlling the growth conditions, either multiple-phase or single-phase epilayers could be deposited. In this paper we present a detailed investigation of

机译：CdSeTe外延层是通过分子束外延在（100）取向的邻近硅片上生长的。通过控制生长条件，可以沉积多相或单相外延层。在本文中，我们对

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来源
《Journal of Crystal Growth》 |2008年第6期|p.1081-1087|共7页
作者
F.Z. Amir; K. Clark; E. Maldonado; W.P. Kirk; J.C. Jiang; J.W. Ager III; K.M. Yu; W. Walukiewicz;
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作者单位

NanoFAB Center and Department of Electrical Engineering, University of Texas at Arlington, 500 S. Cooper St., Arlington, TX 76019, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. Molecular beam epitaxy; B1. Cadmium compounds; B2. Semiconducting II-VI materials;

机译：A3。分子束外延;B1。镉化合物;B2。半导体II-VI材料;

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Epitaxial growth of CdSe_xTe_(1-x) thin films on Si(100) by molecular beam epitaxy using lattice mismatch graded structures

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