GaN crystallization by the high-pressure solution growth method on HVPE bulk seed

M. Bockowski; P. Strak; I. Grzegory; B. Lucznik; S. Porowski

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GaN crystallization by the high-pressure solution growth method on HVPE bulk seed

机译：高压溶液生长法在HVPE块晶上进行GaN晶化

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Recent results of the bulk GaN crystallization by the high-pressure solution (HPS) growth method are presented. The new experimental configurations for seeded growth on HVPE free-standing GaN crystals are proposed. The growth rate, morphology and basic physical properties of the pressure-grown materials are reported. The finite element calculation is used for modeling the convective transport in the solution. The convectional flow velocity vectors in liquid gallium are determined from experimentally measured temperatures and by solving the set of Navier-Stokes equations.

机译：提出了通过高压溶液（HPS）生长方法进行的整体GaN结晶的最新结果。提出了在HVPE独立GaN晶体上进行晶种生长的新实验配置。报告了压力生长材料的生长速率，形态和基本物理性能。有限元计算用于对溶液中的对流输运进行建模。液态镓中的对流流速矢量是通过实验测得的温度并通过求解Navier-Stokes方程组确定的。

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来源
《Journal of Crystal Growth》 |2008年第17期|p.3924-3933|共10页
作者
M. Bockowski; P. Strak; I. Grzegory; B. Lucznik; S. Porowski;
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作者单位

Institute of High Pressure Physics PAS, 01-142 Warsaw, Sokolowska 29/37, Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A2. High-pressure growth from solution; A2. Seeded growth; B1. Gallium nitride;

机译：A2。从溶液中高压生长;A2。种子生长;B1。氮化镓;

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专利

1. Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods [J] . I. Grzegory, B. Lucznik, M. Bockowski, Journal of Crystal Growth . 2007,第1期

机译：低位错密度GaN的高压溶液和HVPE方法结晶
2. Growth of GaN on patterned thick HVPE free standing GaN substrates by high pressure solution method [J] . M. Bockowski, I. Grzegory, G. Nowak, Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：高压溶液法在图案化的厚HVPE自立式GaN衬底上生长GaN
3. Examination of defects and the seed's critical thickness in HVPE-GaN growth on ammonothermal GaN seed [J] . Sochacki Tomasz, Amilusik Mikolaj, Fijalkowski Michal, Physica status solidi, B. Basic research . 2015,第5期

机译：在单热GaN种子上HVPE-GaN生长中的缺陷和种子的临界厚度的检查
4. Growth of bulk GaN by HVPE on pressure grown seeds [C] . I. Grzegory, B. Lucznik, M. Bockowski, Gallium Nitride Materials and Devices . 2006

机译：HVPE在压力生长的种子上生长块状GaN
5. BATCH CRYSTALLIZATION OF ALUMINA TRIHYDRATE FROM SEEDED SUPERSATURATED SOLUTION OF SODIUM ALUMINATE; APPLICATION OF A NUMBER DENSITY POPULATION BALANCE TO A BATCH SYSTEM WITH THE RATE PROCESS GROWTH, NUCLEATION, AND AGGLOMERATION. [D] . GROENEWEG, PIETER GERARD. 1981

机译：从铝酸钠的种子超饱和溶液中分批结晶三水合氧化铝；具有速率过程增长，成核和聚集的批处理系统中的人口密度种群平衡。
6. Direct growth of freestanding GaN on C-face SiC by HVPE [O] . Yuan Tian, Yongliang Shao, Yongzhong Wu, -1

机译：HVPE在C面SiC上直接生长独立式GaN
7. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target [O] . S. S. Kushvaha, M. Senthil Kumar, K. K. Maurya, 2013

机译：使用HVpE生长的GaN体靶通过激光分子束外延在钴蓝（0001）上高度c轴取向生长GaN膜

GaN crystallization by the high-pressure solution growth method on HVPE bulk seed

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