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首页> 外文期刊>Journal of Crystal Growth >Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers
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Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers

机译：4H-SiC 4°截止（0001）Si面外延层中的三角形缺陷和倒金字塔的研究

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摘要

Growth of high-quality epilayers on low off-cut angle wafers is essential for the development of high-performance devices based on hexagonal SiC. Device killing defects such as triangular and inverted pyramid-type defects formed during homoepitaxial growth on the 4H-SiC Si face, 4° off-cut towards [1120] direction, have been investigated in this work. The goal of this research was to minimize or eliminate these defects. Growth parameters responsible for triangular defect formation were identified and optimized for its reduction. It was found that although growth at high temperatures reduces the density of triangular defects and inverted pyramid-type defects, it is not the only remedy for reducing their density; cleanliness of the susceptor along with the initial growth condition plays a major role in the formation of these defects.
机译：在低切角晶片上生长高质量的外延层对于开发基于六角形SiC的高性能器件至关重要。在这项工作中，已经研究了器件杀灭缺陷，例如在4H-SiC Si表面（向[1120]方向偏移4°切角）上进行同质外延生长时形成的三角形和倒金字塔形缺陷。这项研究的目的是最小化或消除这些缺陷。确定负责三角缺陷形成的生长参数，并对其减少进行优化。已经发现，尽管在高温下生长降低了三角形缺陷和倒金字塔形缺陷的密度，但这并不是降低其密度的唯一方法。基座的清洁度以及初始生长条件在这些缺陷的形成中起着重要作用。

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