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首页> 外文期刊>Journal of Crystal Growth >Omvpe Growth Of Highly Strain-balanced Gainas/alinas/inp For Quantum Cascade Lasers
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Omvpe Growth Of Highly Strain-balanced Gainas/alinas/inp For Quantum Cascade Lasers

机译：量子级联激光器的高应变平衡增益/ alinas / inp的Omvpe生长

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The growth and characterization of highly strain-balanced (SB) GalnAs/AlInAs/InP quantum-well heterostructures for mid-infrared quantum cascade lasers (QCLs) are reported. Growth conditions were established to provide a step-flow growth mode, which is believed to be important for precise thickness control of the ultrathin (～1 nm) epilayers of the injector/active QCL regions. Heterostructures with GalnAs and AlInAs absolute layer strain ranging from 0.5% to as high as 1.5% were grown by organometallic vapor-phase epitaxy at a growth temperature of 580℃ and utilized tertiarybutyl arsine and tertiarybutyl phospine as group V sources and triethylgallium, trimethylindium, and trimethyla-luminum as group Ⅲ sources. Growth was optimized by characterization of SB GaInAs/AlInAs/InP multiple quantum-well structures using high-resolution X-ray diffraction (XRD) and atomic force microscopy. Similar surface step structure and XRD spectra were obtained over the 0.5-1.5% SB range. QCLs with nominal strain balance of 1% and based on a four-quantum-well double-phonon resonance-active region design were grown and processed as ridge lasers. These lasers operate at 4.8 urn in pulsed mode at room temperature with a threshold current density of 1.3 kA/cm~2, peak power of 1.74 W, and power-conversion efficiency of 9.7%. These results are comparable to state-of-the-art QCLs grown by molecular beam epitaxy.
机译：报告了用于中红外量子级联激光器（QCL）的高应变平衡（SB）GalnAs / AlInAs / InP量子阱异质结构的生长和表征。建立生长条件以提供逐步流动的生长模式，这被认为对于精确控制注射器/活性QCL区超薄（〜1 nm）外延层的厚度很重要。在580℃的生长温度下，通过有机金属气相外延生长了GalnAs和AlInAs的绝对层应变范围为0.5％至1.5％的异质结构，并使用叔丁基rs烷和叔丁基膦膦作为V组源和三乙基镓，三甲基铟，和三甲基铝作为Ⅲ族来源。通过使用高分辨率X射线衍射（XRD）和原子力显微镜表征SB GaInAs / AlInAs / InP多量子阱结构来优化生长。在0.5-1.5％SB范围内获得了相似的表面台阶结构和XRD光谱。基于四量子阱双声子共振活性区域设计，标称应变平衡为1％的QCL被生长并加工为脊形激光器。这些激光器在室温下以脉冲模式工作于4.8 um，阈值电流密度为1.3 kA / cm〜2，峰值功率为1.74 W，功率转换效率为9.7％。这些结果与分子束外延生长的最新QCL相当。

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