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首页> 外文期刊>Journal of Crystal Growth >Selective Growth Of Gan On Sapphire Substrates Treated With Focused Femtosecond Laser Pulses
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Selective Growth Of Gan On Sapphire Substrates Treated With Focused Femtosecond Laser Pulses

机译:飞秒激光聚焦聚焦处理在蓝宝石衬底上的选择性生长

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摘要

We developed a novel selective growth technique for metalorganic chemical vapor deposition (MOCVD) growth of GaN using an unique substrate treatment procedure; sapphire substrates were treated and patterned with focused femtosecond laser pulses. By adjusting laser-irradiation conditions, GaN film growth could be suppressed over the laser-irradiated region. Using organic layer deposition onto a sapphire substrate prior to laser irradiation, we could achieve selective growth of GaN without sapphire ablation. Compared with the conventional technique, the present selective growth procedure is characterized by patterning without the need for the etching process or mask layers.
机译:我们开发了一种新颖的选择性生长技术,该技术使用独特的衬底处理程序来进行GaN的金属有机化学气相沉积(MOCVD)生长;用聚焦的飞秒激光脉冲对蓝宝石衬底进行处理和构图。通过调节激光照射条件,可以抑制在激光照射区域上的GaN膜生长。在激光辐照之前使用有机层沉积到蓝宝石衬底上,我们可以在不进行蓝宝石烧蚀的情况下实现GaN的选择性生长。与常规技术相比,本发明的选择性生长工艺的特征在于无需蚀刻工艺或掩模层即可进行图案化。

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