Vertical Bridgman Growth Of Bi_(12)sio_(20) Crystal With Axial Vibration

Y. Zhang; Y. Liu; W. Jiang; X. H. Pan; W. Q. Jin; F. Ai

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Vertical Bridgman Growth Of Bi_(12)sio_(20) Crystal With Axial Vibration

机译：Bi_（12）sio_（20）晶体在轴振动作用下的垂直Bridgman生长

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摘要

Bi_(12)SiO_(20) (BSO) single crystal was grown in the <2 2 0> direction by vertical Bridgman technique with axial vibration. The crystals grown with and without vibration have been characterized by X-ray rocking curves, chemical etching and optical transmission spectra. The results show that the quality of the crystal grown with vibration is more homogeneous. The size of the inclusions in crystal becomes smaller and the dislocation density is only 50% as low as that grown in the case of vibration. Furthermore, the optical transmittance is increased by about 10% compared with the crystal grown without vibration in the spectrum range of 600-800 nm.

机译：Bi_（12）SiO_（20）（BSO）单晶通过垂直Bridgman技术在轴向振动的作用下沿<2 2 0>方向生长。 X射线摇摆曲线，化学刻蚀和光透射光谱可以表征在有振动和无振动的情况下生长的晶体。结果表明，随着振动生长的晶体的质量更加均匀。晶体中夹杂物的尺寸变小，位错密度仅为振动时生长的位错密度的50％。此外，与在600-800nm光谱范围内无振动生长的晶体相比，光学透射率增加了约10％。

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来源
《Journal of Crystal Growth》 |2008年第24期|p.5432-5436|共5页
作者
Y. Zhang; Y. Liu; W. Jiang; X. H. Pan; W. Q. Jin; F. Ai;
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作者单位

Structural Ceramics Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
a1. forced convection; a1. stirring; a2. crystal growth; a2. vertical bridgman technique;

机译：a1。强制对流;a1。搅拌;a2。晶体生长;a2。垂直布里奇曼技术;

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专利

1. Effect of axial vibration on Bi12SiO20 crystal growth by vertical Bridgman technique [J] . Zhang Y, Liu Y, Jiang W, Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2009,第3期

机译：垂直布里奇曼技术对轴向振动对Bi12SiO20晶体生长的影响
2. Crystal field studies in Eu~(3+) doped Bi_(12)SiO_(20) and Bi_(12)SiO_(20):V~(5+) single crystals [J] . C. Cascales, P. Porcher, J. Fernandez Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2001,第0期

机译：Eu〜（3+）掺杂Bi_（12）SiO_（20）和Bi_（12）SiO_（20）：V〜（5+）单晶的晶体场研究
3. Growth and characterization of Bi_(12)SiO_(20) and Bi_(12)GeO_(20) crystals [J] . S Kumaragurubaran, S Moorthy Babu, C Subramanian Indian journal of engineering and materials sciences . 2000,第5a6期

机译：Bi_（12）SiO_（20）和Bi_（12）GeO_（20）晶体的生长和表征
4. Optical Activity and Faraday Rotation Around the Edge Absorption of the Crystals Bi_(12)SiO_(20) and Bi_(12)SiO_(20):M (M = Co, Fe) [C] . Todor Dimov, Ilia Iliev, Antonina Hristova Jubilee International Conference of the Balkan Physical Union . 2019

机译：光学活性和法拉第旋转晶体的边缘吸收晶体Bi_（12）SiO_（20）和Bi_（12）SiO_（20）：M（m = Co，Fe）
5. Growth and characterization of bismuth tri-iodide single crystals by modified vertical Bridgman method. [D] . Qui, Wei. 2010

机译：改进的垂直布里奇曼法生长和表征三碘化铋单晶。
6. Study on In-Doped CdMgTe Crystals Grown by a Modified Vertical Bridgman Method Using the ACRT Technique [O] . Pengfei Yu, Biru Jiang, Yongren Chen, 2019

机译：改进的垂直布里奇曼法利用ACRT技术生长In掺杂的CdMgTe晶体的研究
7. Cathodoluminescence and photoluminescence in the core region of Bi_(12)GeO_(20) and Bi_(12)SiO_(20) crystals [O] . Cremades Rodríguez Ana Isabel, Santos M. T., Remon A., 1996

机译：Bi_（12）GeO_（20）和Bi_（12）SiO_（20）晶体核心区域的阴极发光和光致发光

Vertical Bridgman Growth Of Bi_(12)sio_(20) Crystal With Axial Vibration

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