Non-polar a-plane GaN grown on LaAlO_3 (001) substrate by pulsed laser deposition

Yen-Teng Ho; Mei-Hui Liang; Feng-Ke Hsiao; Wei-Lin Wang; Chun-Yen Peng; Wei-Da Chen; Wei-I Lee; Li Chang

首页> 外文期刊>Journal of Crystal Growth >Non-polar a-plane GaN grown on LaAlO_3 (001) substrate by pulsed laser deposition

【24h】

Non-polar a-plane GaN grown on LaAlO_3 (001) substrate by pulsed laser deposition

机译：通过脉冲激光沉积在LaAlO_3（001）衬底上生长的非极性a面GaN

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Non-polar (1120) GaN has been successfully grown on (001) LaAlO_3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film

机译：非极性（1120）GaN已通过脉冲激光沉积方法成功地在（001）LaAlO_3（LAO）衬底上生长。氮等离子体对于生长纯a面GaN膜至关重要。插入ZnO缓冲层可提高GaN薄膜的质量

著录项

来源
《Journal of Crystal Growth》 |2008年第9期|p.1614-1618|共5页
作者
Yen-Teng Ho; Mei-Hui Liang; Feng-Ke Hsiao; Wei-Lin Wang; Chun-Yen Peng; Wei-Da Chen; Wei-I Lee; Li Chang;
展开▼
作者单位

Department of Materials Science and Engineering, National Chiao Tung University, 1001, Tahsueh Road, Hsinchu 300, Taiwan, ROC;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. X-ray diffraction; A3. laser epitaxy; B1. nitride;

机译：A1。 X射线衍射;A3。激光外延;B1。氮化物;

相似文献

外文文献
中文文献
专利

1. High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal-organic chemical vapor deposition [J] . Yang Weijia, Zhang Zichen, Wang Wenliang, Japanese journal of applied physics . 2018,第5期

机译：通过脉冲激光沉积和金属有机化学气相沉积相结合在r面蓝宝石衬底上生长的高质量非极性a面GaN外延膜
2. A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition [J] . Wang Wenliang, Yang Weijia, Wang Haiyan, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2016,第Null期

机译：脉冲激光沉积在蓝宝石衬底上生长c面和a面GaN外延膜的性能比较研究
3. Microwave dielectric properties of pure and Mn-doped lead-free Na_(0.5)Bi_(0.5)TiO_3 epitaxial thin films grown on (001) LaAlO_3 single crystals using pulsed laser deposition [J] . F. Jean, L. Huitema, A. Ghalem, Physica status solidi . 2016,第12期

机译：使用脉冲激光沉积在（001）LaAlO_3单晶上生长的纯锰掺杂无铅Na_（0.5）Bi_（0.5）TiO_3外延薄膜的微波介电性能
4. STRUCTURAL AND OPTICAL CHARACTERIZATION OF NON-POLAR A-PLANE GAN THIN FILMS GROWN ON R-PLANE SAPPHIRE VIA HIGH-TEMPERATURE ALN NUCLEATION LAYERS BY METALORGANIC CHEMICAL VAPOR DEPOSITION [C] . D. Lu, A. Parekh, V. Merai, Proceedings vol.2004-06; Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics and State-of-the-Art Program on Compound Semiconductors International Symposia and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(U . 2004

机译：金属气相化学沉积法通过高温AlN成核层生长在R平面蓝宝石上的非极性A平面甘薄膜的结构和光学表征
5. P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells [D] . Man, Hamdi. 2015

机译：使用两个靶脉冲激光沉积法生长的P掺杂钛酸锶用于薄膜太阳能电池
6. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures [O] . Wenliang Wang, Weijia Yang, Yunhao Lin, -1

机译：在不同温度下通过脉冲激光沉积在AlN / Si异质结构上外延生长的GaN薄膜的微观结构和生长机理
7. Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates [O] . Roberts, AT, Mohanta, A, Everitt, Henry, 2013

机译：在非极性a面GaN基板上生长的不对称InGaN / GaN多量子阱之间耦合的光谱研究
8. Study of substrate diffusion in epitaxial n-type CdSe films grown on GaAs (001) by pulsed laser ablation [R] . Park, J. , Rouleau, C. M. , Lowndes, D. H. 1998

机译：用脉冲激光烧蚀研究Gaas（001）上生长的外延n型Cdse薄膜的衬底扩散

Non-polar a-plane GaN grown on LaAlO_3 (001) substrate by pulsed laser deposition

摘要

著录项

相似文献

相关主题

期刊订阅