Influence of hydrogen input partial pressure on the polarity of InN on GaAs (111)A grown by metalorganic vapor phase epitaxy

Hisashi Murakami; Ken-ichi Eriguchi; Jun-ichi Torii; Hyun-Chol Cho; Yoshinao Kumagai; Akinori Koukitu

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Influence of hydrogen input partial pressure on the polarity of InN on GaAs (111)A grown by metalorganic vapor phase epitaxy

机译：氢输入分压对金属有机气相外延生长的GaAs（111）A上InN极性的影响

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摘要

Influences of hydrogen input partial pressure in the carrier gas (F° = P _(H_2)~o/(P _(H_2)~o + P _(H_2)~o)) on the crystalline quality and polarities of InN on GaAs (111)A surfaces were investigated by metalorganic vapor phase epitaxy (MOVPE). It was fou

机译：载气中氢输入分压（F°= P _（H_2）〜o /（P _（H_2）〜o + P _（H_2）〜o））对InN在GaAs上的结晶质量和极性的影响（111）通过金属有机气相外延（MOVPE）研究了表面。是f

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来源
《Journal of Crystal Growth》 |2008年第9期|p.1602-1606|共5页
作者
Hisashi Murakami; Ken-ichi Eriguchi; Jun-ichi Torii; Hyun-Chol Cho; Yoshinao Kumagai; Akinori Koukitu;
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作者单位

Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. surface structure; A3. metalorganic vapor phase epitaxy; B1. nitrides; B2. semiconducting indium compounds;

机译：A1。表面结构;A3。金属有机气相外延;B1。氮化物;B2。半导体铟化合物;

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专利

1. Influence of surface atom arrangement on the growth of InN layers on GaAs (111)A and (111)B surfaces by metalorganic vapor-phase epitaxy [J] . Hisashi Murakami, Jun-ichi Torii, Yoshinao Kumagai, Journal of Crystal Growth . 2007,第Jan期

机译：金属有机气相外延对表面原子排列对GaAs（111）A和（111）B表面InN层生长的影响
2. nfluence of surface atom arrangement on the growth of InN layers on GaAs (111)A and (111)B surfaces by metalorganic vapor-phase epitaxy [J] . Hisashi Murakami, Jun-ichi Torii, Yoshinao Kumagai, Journal of Crystal Growth . 2007,第Jan期

机译：金属有机气相外延对表面原子排列对GaAs（111）A和（111）B表面InN层生长的影响
3. Growth of InN films on GaAs (111) and GaP(111) substrates by microwave-excited metalorganic vapor phase epitaxy [J] . Qixin Guo, Hiroshi Ogawa, Hirofumi Yamano, Applied Physics Letters . 1995,第6期

机译：微波激发金属有机气相外延在GaAs（111）和GaP（111）衬底上生长InN膜
4. Transmission Electron Microscope Analysis of Microstructures in GaN Grown on (111)A and (111)B of GaAs by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy [C] . T. MITATE, Y. SONODA, K. OKI, Fourth International Conference on Nitride Semiconductors . 2002

机译：金属有机氯化氢气相外延法在GaAs的（111）A和（111）B上生长的GaN中的微观结构的透射电镜分析
5. Phase Stability and Ferromagnetism in Thin Film InMnSb Multi-Phase Semiconductor Alloys Grown by Metalorganic Vapor Phase Epitaxy [D] . Feeser, Caitlin Elizabeth. 2012

机译：金属有机气相外延生长的薄膜InMnSb多相半导体合金的相稳定性和铁磁性
6. CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films [O] . Akira Kusaba, Guanchen Li, Pawel Kempisty, 2019

机译：有机金属气相外延过程中GaN（0001）和（000-1）的CH4吸附概率及其与膜中碳污染的关系
7. Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001) [O] . Nayak, Sabyasachi, Huang, Jen-Wu, Redwing, Joan M., 1996

机译：氧对金属有机气相外延生长Gaas（001）表面形貌的影响

Influence of hydrogen input partial pressure on the polarity of InN on GaAs (111)A grown by metalorganic vapor phase epitaxy

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