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首页> 外文期刊>Journal of Crystal Growth >On The Influence Of Solution Density On The Formation Of Macroscopic Defects In The Liquid Phase Epitaxy Of Gan
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On The Influence Of Solution Density On The Formation Of Macroscopic Defects In The Liquid Phase Epitaxy Of Gan

机译：固相密度对赣液相外延中宏观缺陷形成的影响

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摘要

This paper reports on a new simple method for avoiding particle-induced macroscopic defects using the liquid phase epitaxy (LPE) of GaN as an example. In a series of growth experiments by LPE of GaN it is demonstrated that the number of particle-induced macrodefects in the epitaxial layers correlates strongly and reproducibly with the density of the solution. In solutions with a density higher than that of the deleterious particles, the particles float on the solution and hence are hindered to get into contact with the seed, which is placed at the bottom of the crucible. Consequently, so-called depressions - a typical particle-induced defect in GaN-LPE layers - are avoided. The principle of avoiding the formation of macroscopic defects originating from particles by adapting the density of the solution (density criterion) should be generally applicable to solution growth processes, regardless of the material system.
机译：本文以GaN的液相外延（LPE）为例，介绍了一种避免颗粒引起的宏观缺陷的新的简单方法。在通过GaN的LPE进行的一系列生长实验中，证明了外延层中由颗粒引起的宏观缺陷的数量与溶液的密度密切相关且可复制。在密度高于有害颗粒密度的溶液中，颗粒漂浮在溶液上，因此被阻止与放置在坩埚底部的晶种接触。因此，避免了所谓的凹陷-GaN-LPE层中典型的颗粒诱发的缺陷-。通过适应溶液的密度（密度标准）来避免形成源自颗粒的宏观缺陷的原理通常适用于溶液生长过程，而与材料系统无关。

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