A new photocatalyzer InN_xO_y film grown by ArF excimer laser-induced MOCVD at low temperature (RT～200 ℃)

A. Yamamoto; M. Miyanishi; T. Kunishige; T. Kobayashi; A. Hashimoto; Y. Nambo

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A new photocatalyzer InN_xO_y film grown by ArF excimer laser-induced MOCVD at low temperature (RT～200 ℃)

机译：ArF受激准分子激光诱导的MOCVD低温（RT〜200℃）生长的新型光催化InN_xO_y薄膜

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Using the ArF excimer laser-induced MOCVD method, InN_xO_y. thin films are grown on a glass substrate. The photolytical decomposition of NH_3 enables to grow them even at room temperature. It is found that the InN_xO_y, thin films grown at a temperature less than 250 ℃ show an excellent photocatalytic decomposition of H_2S under UV irradiation, while the activity of the films grown at a temperature higher than 300 ℃ is very small, less than 1/4 of that for the low-temperature films. The excellent photocatalytic activity for the low-temperature films is closely related to the amorphous phase of the films.

机译：使用ArF受激准分子激光诱导的MOCVD方法InN_xO_y。在玻璃基板上生长薄膜。 NH_3的光解分解使它们即使在室温下也能生长。发现在低于250℃的温度下生长的InN_xO_y薄膜在紫外线照射下表现出优异的H_2S光催化分解，而在高于300℃的温度下生长的薄膜的活性非常小，小于1 /其中4个用于低温胶片。低温薄膜的优异光催化活性与薄膜的非晶相密切相关。

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来源
《Journal of Crystal Growth》 |2007年第1期|390-393|共4页
作者
A. Yamamoto; M. Miyanishi; T. Kunishige; T. Kobayashi; A. Hashimoto; Y. Nambo;
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作者单位

University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. metalorganic chemical vapor deposition; B1. nitrides; B2. semiconducting indium compounds;

机译：A3。金属有机化学气相沉积;B1。氮化物B2。半导体铟化合物;

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1. A new photocatalyzer InN_xO_y film grown by ArF excimer laser-induced MOCVD at low temperature (RT～200℃) [J] . A. Yamamoto, M. Miyanishi, T. Kunishige, Journal of Crystal Growth . 2007,第Jan期

机译：ArF受激准分子激光诱导的MOCVD低温（RT〜200℃）生长的新型光催化InN_xO_y薄膜
2. Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD [J] . Shuaijie Wang, Fuwen Qin, Yizhen Bai, Coatings . 2020,第12期

机译：沉积温度对高温ECR-MOCVD在自站立金刚石基材上生长的INN薄膜结构和电学的影响
3. Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD [J] . Lund Cory, Agarwal Anchal, Romanczyk Brian, Semiconductor science and technology . 2018,第9期

机译：利用MOCVD研究在低温下生长的低电阻N-极性p-GaN薄膜的Mgδ掺杂
4. Low-resistive textured ZnO thin films grown by MOCVD and photo-MOCVD at very low-temperature of 150 degrees [C] . Yamada, A., Wenas, . 1991

机译：通过在150度的极低温下通过MOCVD和光MOCVD生长的低电阻纹理化ZnO薄膜
5. III-Nitride semiconductor films and device structures grown by low-pressure MOCVD. [D] . Kung, Patrick. 2000

机译：通过低压MOCVD生长的III型氮化物半导体膜和器件结构。
6. Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation [O] . Kunsik An, Ho-Nyun Lee, Kwan Hyun Cho, 2020

机译：193 nm ArF受激准分子激光在激光辅助等离子体增强SiNx的化学气相沉积中的作用以进行低温薄膜封装
7. A new photocatalyzer InNxOy film grown by ArF excimer laser-induced MOCVD at low temperature (RT∼200 °C) [O] . YAMAMOTO A, MIYANISHI M, KUNISHIGE T, 2007

机译：一种新型光催化剂InNxOy薄膜，由arF准分子激光诱导mOCVD在低温（RT~200°C）下生长
8. Study of Grown-In Defects Verses Growth Parameters in GaAs and Al(x)Ga(1-x)AS Epitaxial Films Grown by LPE and MOCVD Techniques [R] . Li, S. S. 1985

机译：LpE和mOCVD技术生长Gaas和al（x）Ga（1-x）as外延薄膜生长参数的研究

A new photocatalyzer InN_xO_y film grown by ArF excimer laser-induced MOCVD at low temperature (RT～200 ℃)

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