...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si_3N_4
【24h】

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si_3N_4

机译：通过用原位沉积Si_3N_4覆盖的MOVPE在大尺寸硅衬底上生长AlGaN / GaN HEMT

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on 4 and 6 in Si(111) substrates by metal organic vapor phase epitaxy (MOVPE). A record sheet resistance of 256 Ω/□ has been measured by contactless eddy current mapping on 4 in silicon substrates. The wafer also shows an excellent uniformity and the standard variation is 3.6Ω/□ over the whole wafer. These values were confirmed by Hall-Van der Pauw measurements. In the 2DEG at the AlGaN/GaN interface, the electron mobility is in the range of 1500-1800cm~2/Vs and the electron density is between 1.3 x 10~(13) and 1.7 x 10~(13)cm~(-2). The key step in obtaining these results is an in-situ deposited Si_3N_4 passivation layer. This in-situ Si_3N_4, deposited directly after AlGaN top layer growth in the MOVPE reactor chamber, not only prevents the stress relaxation in AlGaN/GaN hetero-structures but also passivates the surface states of the AlGaN cap layer. HEMT transistors have been processed on the epitaxial structures and the maximum source-drain current density is 1.1 A/mm for a gate-source voltage of 2 V. The current collapse is minimized thanks to in-situ Si_3N_4. First results on AlGaN/GaN structures grown on 6 in Si(111) are also presented.
机译：AlGaN / GaN高电子迁移率晶体管（HEMT）通过金属有机气相外延（MOVPE）在Si（111）基板上的4和6层上生长。通过在4个硅基板上进行非接触式涡流测绘，测得的记录薄层电阻为256Ω/□。晶圆还显示出出色的均匀性，整个晶圆的标准偏差为3.6Ω/□。这些值通过Hall-Van der Pauw测量得到证实。在AlGaN / GaN界面的2DEG中，电子迁移率在1500-1800cm〜2 / Vs的范围内，电子密度在1.3 x 10〜（13）至1.7 x 10〜（13）cm〜（- 2）。获得这些结果的关键步骤是原位沉积的Si_3N_4钝化层。直接在AlGaN顶层生长后在MOVPE反应室中沉积的这种原位Si_3N_4不仅可以防止AlGaN / GaN异质结构中的应力松弛，而且可以钝化AlGaN盖层的表面状态。 HEMT晶体管已在外延结构上进行了处理，并且对于2 V的栅极-源极电压，最大源极-漏极电流密度为1.1 A / mm。由于原位Si_3N_4，电流崩溃得以最小化。还介绍了在Si（111）中6上生长的AlGaN / GaN结构的初步结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号