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首页> 外文期刊>Journal of Crystal Growth >Evaluation of sapphire substrate heating behaviour using GaN band-gap thermometry
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Evaluation of sapphire substrate heating behaviour using GaN band-gap thermometry

机译：使用GaN带隙测温法评估蓝宝石衬底的加热行为

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摘要

The recent development of a commercial band-gap thermometry system for wide band-gap materials such as GaN (the k-Space Associates'' "BandiT™") has allowed a systematic study of the relationship between pyrometric or thermocouple temperature-monitoring methods and the directly determined layer temperature. The wide band gap of GaN gives a weak and sample-dependent coupling to radiant heat sources, and it is common in molecular beam epitaxy (MBE) to use a sputtered Mo coating on the rear of the sapphire substrate to improve the efficiency and consistency of heat transfer. We have investigated the role of this backing layer and the use of a PBN diffuser in an MBE chamber, but similar results are expected to be obtained from band-gap thermometry in a metal-organic vapour phase epitaxy (MOVPE) system. The wide range spectrometer used for the band-edge determination can also be employed in a pyrometric mode, at wavelengths both within the band gap of GaN and above it. The latter is insensitive to thickness oscillations, and is less affected by the presence or absence of a Mo backing layer. Results are presented comparing all these measurement techniques, and analysed to show that the Mo backing does not significantly increase the power coupling into the epitaxial layer, although it does improve the accuracy of pyrometric measurements.
机译：用于GaN等宽带隙材料的商用带隙测温系统的最新开发（k-Space Associates的“ BandiT™”）允许对高温法或热电偶温度监测方法之间的关系进行系统研究。直接确定的层温度。 GaN的宽带隙给辐射热源提供了弱的且取决于样品的耦合，在分子束外延（MBE）中很常见的是在蓝宝石衬底的背面使用溅射Mo涂层来提高效率和一致性。传播热量。我们已经研究了该背衬层的作用以及在MBE室中使用PBN扩散器的情况，但是在金属有机气相外延（MOVPE）系统中的带隙测温有望获得相似的结果。用于带状边缘测定的宽光谱仪也可以在高温模式下使用，其波长既可以在GaN的带隙内也可以在其上方。后者对厚度振荡不敏感，并且较少受存在或不存在Mo背衬层的影响。给出了比较所有这些测量技术的结果，并进行了分析，结果表明，尽管Mo背衬确实提高了高温测量的准确性，但Mo背衬并未显着增加耦合到外延层的功率。

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