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首页> 外文期刊>Journal of Crystal Growth >Piezoresistance of suspended InAs/AlGaSb heterostructure nanobeam
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Piezoresistance of suspended InAs/AlGaSb heterostructure nanobeam

机译：悬浮InAs / AlGaSb异质结构纳米束的压阻

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摘要

Double-clamped InAs/AlGaSb nanobeams 50 nm thick and 50-200 nm wide were fabricated using electron beam lithography, and their piezoresistance was measured and analyzed. Deep etching of a sacrificial layer produced an arched beam due to the shear stress arising from lattice mismatch, while shallow etching yielded a straight beam. The measured gauge factor and piezoresistance coefficient were positive or negative depending on whether the beam was straight or arched, respectively, and were much larger in magnitude than those for bulk InAs. These surprising phenomena are roughly explainable in terms of the piezoelectric effect in the thin films of the heterostructure. An analysis of the calculated piezoelectricity (PE) and piezoresistance yielded guidelines for obtaining a higher piezoresistance, and thus a higher sensitivity, in nanomechanical sensors made using such a heterostructure.
机译：使用电子束光刻技术制造了厚度为50 nm，宽度为50-200 nm的双钳位InAs / AlGaSb纳米束，并测量和分析了它们的压阻。由于晶格失配产生的剪切应力，对牺牲层的深蚀刻会产生拱形束，而浅蚀刻会产生直束。测得的应变系数和压阻系数分别为正或负，具体取决于电子束是直的还是拱形的，其幅度远大于块状InAs的幅度。就异质结构的薄膜中的压电效应而言，这些令人惊讶的现象是可以粗略解释的。对计算出的压电性（PE）和压阻的分析得出了在使用这种异质结构制成的纳米机械传感器中获得更高压阻，从而获得更高灵敏度的指南。

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