Substrate temperature measurement using a commercial band-edge detection system

I. Farrer; J.J. Harris; R. Thomson; D. Barlett; C.A. Taylor; D.A. Ritchie

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Substrate temperature measurement using a commercial band-edge detection system

机译：使用商用带边检测系统进行基板温度测量

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We report on the use of a commercially available band-edge detection system for substrate temperature monitoring of gallium arsenide substrates. The extension of the technique to the cases where strong absorption by either the substrate or substrate holder might normally preclude the use of such systems due to poor signal levels is discussed. For indium-mounted wafers, a background subtraction/removal is applied which allows unambiguous determination of the band edge across the full temperature range. An alternative method of operation of the instrument as a highly configurable pyrometer allows measurements to be made on highly conducting p-type substrates where free carrier absorption swamps the band edge.

机译：我们报告了使用可商购的带式边缘检测系统对砷化镓衬底进行衬底温度监测。讨论了将该技术扩展到由于信号电平较差而通常被基板或基板支架强烈吸收而可能无法使用此类系统的情况。对于安装在铟上的晶片，应用了背景减法/去除法，可以在整个温度范围内明确确定能带边缘。仪器的另一种可选操作方式是高度可配置的高温计，可在自由载流子吸收淹没带边缘的高导电p型衬底上进行测量。

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来源
《Journal of Crystal Growth》 |2007年第4期|p.88-92|共5页
作者
I. Farrer; J.J. Harris; R. Thomson; D. Barlett; C.A. Taylor; D.A. Ritchie;
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作者单位

Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Substrate; A3. Molecular beam epitaxy;

机译：A1。基材;A3。分子束外延;

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Substrate temperature measurement using a commercial band-edge detection system

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