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首页> 外文期刊>Journal of Crystal Growth >Application of rapid thermal annealing on 1.3-1.55 μm GaInNAs(Sb) lasers grown by molecular beam epitaxy
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Application of rapid thermal annealing on 1.3-1.55 μm GaInNAs(Sb) lasers grown by molecular beam epitaxy

机译：快速热退火在分子束外延生长的1.3-1.55μmGaInNAs（Sb）激光器上的应用

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摘要

Rapid thermal annealing (RTA) has been demonstrated as an effective way to improve the crystal quality of GaInNAs(Sb) quantum wells (QWs). However, few investigations have been made into its application in laser growth and fabrication. We have fabricated 1.3 μm GaInNAs lasers, both as -grown and with post-growth RTA. Enhanced photoluminescence (PL) intensity and decreased threshold current are obtained with RTA, but the characteristic temperature T_0 and slope efficiency deteriorate. Furthermore, T_0 has an abnormal dependence on the cavity length. We attribute these problems to the deterioration of the wafer's surface. RTA with deposition of SiO_2 was performed to avoid this deterioration, T_0 was improved over the samples that underwent RTA without SiO_2. Post-growth and in situ annealing were also investigated in a 1.55 μm GaInNAsSb system. Finally, continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength over 1.55 μm was realized by introducing an in situ annealing process.
机译：快速热退火（RTA）已被证明是提高GaInNAs（Sb）量子阱（QWs）晶体质量的有效方法。然而，很少对其在激光生长和制造中的应用进行研究。我们已经制造了1.3μm的GaInNAs激光器，既有生长型也有后生长型RTA。使用RTA可以获得增强的光致发光（PL）强度和降低的阈值电流，但是特性温度T_0和斜率效率会下降。此外，T_0对腔体长度有异常的依赖性。我们将这些问题归因于晶片表面的劣化。进行了带有SiO_2沉积的RTA以避免这种劣化，与经过SiO_2的RTA的样品相比，T_0有所提高。在1.55μmGaInNAsSb系统中还研究了后生长和原位退火。最后，通过引入原位退火工艺，实现了波长大于1.55μm的GaAs基稀氮化物激光器在室温下的连续运行。

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