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首页> 外文期刊>Journal of Crystal Growth >Formation mechanism of rotational twins in beam-induced lateral epitaxy on (111)B GaAs substrate
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Formation mechanism of rotational twins in beam-induced lateral epitaxy on (111)B GaAs substrate

机译：（111）B GaAs衬底上束流诱导的横向外延中旋转孪晶的形成机理

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摘要

The formation mechanism of rotational twins was systematically studied in beam-induced lateral epitaxy (BILE) on (111)B GaAs substrates using in situ scanning electron microscope (SEM) and ex situ atomic force microscope (AFM). As a result, it was found that rotational twins were produced from two-dimensional nuclei on the surface with 2 x 2 reconstruction by introducing stacking faults beneath them. As-trimers on 2 x 2 reconstruction probably induced the change. This was confirmed by the result that the formation of rotational twins was suppressed by the use of substrates with offset angles and a high growth temperature. The former is characterized by the high density of surface steps, which inhibits two-dimensional nucleation by the narrow inter-step distance. The latter brings 19~(1/2) x 19~(1/2) reconstruction, which includes no As-trimer, and leads to the normal stacking of growth with a smooth surface even with two-dimensional nucleation.
机译：利用原位扫描电子显微镜（SEM）和非原位原子力显微镜（AFM），系统地研究了在（111）B GaAs衬底上的束致横向外延（BILE）中旋转孪晶的形成机理。结果发现，通过在表面的二维原子核通过在其下方引入堆垛层错而以2 x 2的重构产生了旋转孪晶。 2 x 2重建的三聚体可能引起了这种变化。结果证实了，通过使用具有偏角和高生长温度的衬底，抑制了旋转孪晶的形成。前者的特征在于表面台阶的密度高，而台阶间的距离窄则抑制了二维成核。后者带来了19〜（1/2）x 19〜（1/2）的重建，其中不包含As-三聚体，即使在二维成核的情况下，也能正常生长具有光滑表面的堆叠物。

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