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首页> 外文会议>IEEE Photovoltaic Specialists Conference >The effects of indium pre-evaporation on rotational twin formation in GaAs films on Si(111)
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The effects of indium pre-evaporation on rotational twin formation in GaAs films on Si(111)

机译：铟预蒸发对Si（111）上GaAs膜中旋转孪晶形成的影响

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The effects of In pre-evaporation on the formation of rotational twin domains (TW) in GaAs layers on Si (111) substrates were systematically investigated. Atomic arrangements of In atoms on the Si substrate during pre-evaporation were studied and resulting formation of TW were discussed. The pre-evaporation of In resulted in the formation of InAs islands. The size of InAs islands was smaller than that of GaAs islands grown on Si substrate without In pre-evaporation. The amount of TW increased with increasing sizes of GaAs or InAs at initial phase. These results suggested that the size of island formed during the initial pre-evaporation phase could control the TW growth in the final GaAs film.
机译：系统研究了In预蒸发对Si（111）衬底上GaAs层中旋转孪晶畴（TW）形成的影响。研究了预蒸发过程中Si衬底上In原子的原子排列，并讨论了生成的TW。 In的预蒸发导致InAs岛的形成。 InAs岛的尺寸小于在不进行In预蒸发的情况下在Si衬底上生长的GaAs岛的尺寸。在初始阶段，TW的量随GaAs或InAs尺寸的增加而增加。这些结果表明，在初始预蒸发阶段形成的岛的大小可以控制最终GaAs膜中TW的生长。

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