Ⅲ-Ⅴ dilute nitride-based multi-quantum well solar cell

A. Freundlich; A. Fotkatzikis; L. Bhusal; L. Williams; A. Alemu; W. Zhu; J.A.H. Coaquira; A. Feltrin; G. Radhakrishnan

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Ⅲ-Ⅴ dilute nitride-based multi-quantum well solar cell

机译：Ⅲ-Ⅴ型稀氮化物多量子阱太阳能电池

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Photovoltaic properties of a preliminary set of 1-1.2 eV dilute nitride GaAsN/GaAs MQW solar cells grown by chemical beam epitaxy are investigated. The study reveals, as expected from the enhancement of effective masses, unusually high photo-conversion strength of the MQW region that exceeds by nearly two-fold those reported for conventional MQW solar cells of comparable bandgaps. Despite a current output (～25 A m~(-2) in absence of ARC) comparable to that of conventional GaInNAs solar cells, output voltages (e.g. ～0.6 V for a 1.1 eV MQW cell) appear to be significantly higher than those reported for bulk-like counterparts. Bias-dependent external quantum efficiency measurements reveal an incomplete collection of photo-generated carriers from the wells under operating conditions (forward bias), which should be mitigated by the use of thinner barrier.

机译：研究了通过化学束外延生长的一组初步的1-1.2 eV稀氮化物GaAsN / GaAs MQW太阳能电池的光伏性能。该研究表明，正如有效质量的提高所预期的那样，MQW区域的异常高的光转换强度超过了可比带隙的传统MQW太阳能电池所报告的近两倍。尽管电流输出（在没有ARC的情况下约为25 A m〜（-2））可与传统GaInNAs太阳能电池相媲美，但输出电压（例如1.1 eV MQW电池的约为0.6 V）似乎明显高于所报道的电压。适用于类似散装的物品。依赖于偏置的外部量子效率测量表明，在工作条件下（正向偏置）井中光生载流子的收集不完整，应通过使用较薄的势垒来缓解这种情况。

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来源
《Journal of Crystal Growth》 |2007年第4期|p.993-996|共4页
作者
A. Freundlich; A. Fotkatzikis; L. Bhusal; L. Williams; A. Alemu; W. Zhu; J.A.H. Coaquira; A. Feltrin; G. Radhakrishnan;
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作者单位

Photovoltaics and Nanostructures Laboratories, Center for Advanced Materials and Physics Department, University of Houston, TX 77204-5004, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. Chemical beam epitaxy; A3. Quantum wells; B2. Semiconducting Ⅲ-Ⅴ materials; B3. Dilute nitride; B3. Solar cells;

机译：A3。化学束外延;A3。量子阱;B2。半导体Ⅲ-Ⅴ材料;B3。稀释氮化物;B3。太阳能电池;

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2. Optical Investigations Of Bulk And Multi-quantum Well Nitride-based Microcavities [J] . F. Reveret, F. Medard, P. Disseix, Optical Materials . 2009,第3期

机译：批量和多量子阱氮化物微腔的光学研究
3. The role of silver nanoparticles in performance of multi-quantum well double heterojunction InGaN/GaN solar cells [J] . Piralaee Mina, Asgari A. Chemical Physics Letters . 2020,第1期

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4. Dilute nitride-based III-V heterostructures for unhindered carrier transport in quantum-confined p-i-n solar cells [C] . A. Alemu, A. Freundlich Conference on physics and simulation of optoelectronic devices XVII; 20090126-29; San Jose, CA(US) . 2009

机译：量子受限的p-i-n太阳能电池中不受阻碍的载流子传输的基于氮化物的稀释III-V异质结构
5. Development of III-V dilute nitride-based solar cells grown by chemical beam epitaxy [D] . Fotkatzikis, Aristotelis 2007

机译：由化学束外延生长的III-V稀氮化物的太阳能电池的研制
6. Dilute nitride and GaAs n-i-p-i solar cells [O] . Simone Mazzucato, Benjamin Royall, Richard Ketlhwaafetse, 2012

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7. Design and Growth of InAs Multi-Quantum Dots and InGaAs Multi-Quantum Wells for Tandem Solar Cell [O] . Joong-Seok Cho, Sang-Hyo Kim, Sue-Jeong HwangBoe, 2009

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Ⅲ-Ⅴ dilute nitride-based multi-quantum well solar cell

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