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首页> 外文期刊>Journal of Crystal Growth >AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization
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AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

机译：独立式GaN衬底上的AlGaN / GaN HEMT：MBE生长和微波表征

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摘要

We investigate the role of substrate temperature and gallium flux on the DC and microwave properties of AlGaN/GaN high electron mobility transistors grown by molecular-beam epitaxy on free standing, hydride vapor phase epitaxy grown GaN substrates. The freestanding substrates have threading dislocation densities below 10~7 cm~(-2). We find that AlGaN/GaN heterostructures with excellent properties may be grown within a wide range of substrate temperatures and fluxes. Electron Hall mobilities above 1700 cm~2/V s and sheet resistances below 370 Ω/□ are typical. We are able to obtain high saturated drain currents with low gate leakage. Off-state breakdown voltages as high as 200 V with low drain and gate leakage currents have been measured. Further, we have measured microwave output power densities above 5 W/mm at 4 GHz with a power-added efficiency of 46% and an associated gain of 13.4dB. We attribute improved electrical properties in these devices to the reduced threading dislocation density compared to those grown on non-native substrates.
机译：我们研究了衬底温度和镓通量对在自立，氢化物气相外延生长的GaN衬底上通过分子束外延生长的AlGaN / GaN高电子迁移率晶体管的DC和微波特性的作用。独立式基板的穿线位错密度低于10〜7 cm〜（-2）。我们发现具有优异性能的AlGaN / GaN异质结构可能会在较宽的衬底温度和通量范围内生长。典型的是电子霍尔迁移率高于1700 cm〜2 / V s，薄层电阻低于370Ω/□。我们能够以低栅极泄漏获得高饱和漏极电流。已经测量了高达200 V的截止状态击穿电压，并具有低漏极和栅极泄漏电流。此外，我们在4 GHz时测得的微波输出功率密度高于5 W / mm，功率附加效率为46％，相关增益为13.4dB。我们将这些设备中改善的电性能归因于与在非本机基板上生长的那些相比，线程错位密度的降低。

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