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首页> 外文期刊>Journal of Crystal Growth >Nitrogen-dependent effects on GaInNAs photoluminescence upon annealing
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Nitrogen-dependent effects on GaInNAs photoluminescence upon annealing

机译：退火后氮对GaInNAs光致发光的影响

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摘要

In order to assess the effects of nitrogen on GaInNAs during the annealing process, we analyzed several quantum wells (QWs) with different nitrogen contents after annealing at different rapid thermal annealing (RTA) conditions. When only the RTA temperature was varied, we found two blueshift regimes. Up to 700℃ (strong blueshift regime), the blueshift experiences a rapid increase with increasing RTA temperature, while above this temperature (weak blueshift regime) it saturates. The activation energies of the blueshift mechanism in the strong blueshift regime decrease with increasing nitrogen content. In the weak blueshift regime, the blueshift saturates more slowly with respect to RTA temperature and to higher values the higher the nitrogen content. When only the RTA time was changed, the blueshift again saturated to higher values the more the nitrogen content. The photoluminescence (PL) efficiency improvement is, on the other hand, unaffected by the nitrogen concentration and depends only on the RTA conditions used. Moreover, short-time annealing at high temperatures results in a smaller PL broadening and is therefore preferable for the growth of active GaInNAs. In outdiffusion from the QW is evident only for long-time annealing. Therefore, the blueshift effects seen for the short-time annealing are related to a different mechanism.
机译：为了评估退火过程中氮对GaInNAs的影响，我们分析了在不同快速热退火（RTA）条件下退火后具有不同氮含量的几个量子阱（QW）。当仅RTA温度发生变化时，我们发现了两个蓝移机制。在高达700℃（强蓝移状态）下，蓝移会随着RTA温度的升高而迅速增加，而在此温度以上（弱蓝移状态）会饱和。在强蓝移状态下，蓝移机制的活化能随氮含量的增加而降低。在弱蓝移状态下，蓝移相对于RTA温度的饱和速度更慢，氮含量越高，饱和度越高。当仅改变RTA时间时，氮含量越多，蓝移将再次饱和至更高的值。另一方面，光致发光（PL）效率的提高不受氮浓度的影响，并且仅取决于所使用的RTA条件。而且，高温下的短时退火导致较小的PL展宽，因此对于活性GaInNA的生长是优选的。从QW向外扩散仅在长时间退火时才明显。因此，在短时退火中看到的蓝移效应与不同的机理有关。

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