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首页> 外文期刊>Journal of Crystal Growth >AlAs-in-AlSb digital alloy superlattice morphology versus growth temperature
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AlAs-in-AlSb digital alloy superlattice morphology versus growth temperature

机译：AlAs-in-AlSb数字合金超晶格形貌与生长温度

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摘要

We report a systematic study of how growth temperature affects the quality of AlAs-in-AlSb digital alloy superlattices grown by molecular beam epitaxy for barrier layers in type-II W-structure infrared lasers. Using cross-sectional scanning tunneling microscopy to characterize the atomic-scale structure of the material, we find substantial differences in the superlattice morphology for growth temperatures between 435 and 540 degrees C. At lower growth temperatures, the AlAs forms three-dimensional clusters, with continuous structures threading through multiple periods of the superlattice. With increasing temperature, the morphology of the digitally doped AlAs layers consistently improves, with nearly perfect delta doping observed at the highest temperatures studied. The changes in the superlattice structure can be attributed primarily to the known temperature dependence of the AlSb growth front morphology, with secondary effects associated with anion-exchange at the interfaces and the different surface reconstructions on the two growth surfaces. (c) 2005 Elsevier B.V. All rights reserved.
机译：我们报告有关生长温度如何影响分子束外延生长的II型W结构红外激光器中阻挡层的AlAs-in-AlSb数字合金超晶格质量的系统研究。使用截面扫描隧道显微镜表征材料的原子尺度结构，我们发现在435至540摄氏度之间的生长温度下，超晶格形态存在显着差异。在较低的生长温度下，AlAs形成三维团簇，且连续结构穿过多个超晶格周期。随着温度的升高，数字掺杂的AlAs层的形貌不断改善，在研究的最高温度下观察到近乎完美的δ掺杂。超晶格结构的变化可主要归因于AlSb生长前沿形态的已知温度依赖性，其次生效应与界面处的阴离子交换和两个生长表面上不同的表面重构有关。 （c）2005 Elsevier B.V.保留所有权利。

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